Results 61 to 70 of about 4,582,109 (189)

Studies on Growth of ZnGeP2 Single Crystals

open access: yes工程科学与技术, 2008
:Abstract:Single-phase ZnGeP2 polycrystals were successfully synthesized by modified two-zone vapor-transporting method(MTVM)and mechanic oscillations technique, directly from high pure(6N) Zn, Ge, and red P elements according to the ZnGeP2 stoichiometry
Zhao Xin   +7 more
doaj  

Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material

open access: yes, 2008
In this work, the growth of CdZnTe 2-inches crystals by the Boron Oxide Vertical Bridgman Technique is reported. A thin boron oxide layer fully encapsulates the growing crystals, thus preventing a direct crystal-crucible ...
R. Mosca   +29 more
core   +1 more source

Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications

open access: yes, 2011
CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals.
R. Mosca   +23 more
core   +1 more source

Letter, 1949 October 27, from Carol Bridgman to Carson Robison [PDF]

open access: yes, 1949
1 page, Bridgman is in the Index Department at the American Society of Composer, Authors and ...
Bridgman, Carol
core   +1 more source

X-ray scattering studies of compound semiconductors [PDF]

open access: yes, 1997
In this thesis, techniques of high resolution x-ray diffraction, topography and grazing incidence reflectivity have been employed in order to gain information on compound semiconductors. A recent growth technique. Vertical Gradient Freeze (VGF), has been
Moore, C.D., Moore, Caroline Dale
core  

Full encapsulated CdZnTe crystals by the vertical Bridgman method

open access: yes, 2008
CdZnTe crystals were grown by the vertical Bridgman technique using boron oxide for preventing material decomposition. The experiments show that a boron oxide layer completely encapsulates the crystal during growth, so that the crystal grows without ...
Zappettini A   +5 more
core   +1 more source

Letter, 1944 July 10, from Carol Bridgman to Carson Robison [PDF]

open access: yes, 1944
1 page, Bridgman worked for the Index Department at the American Society of Composer, Authors and ...
Bridgman, Carol
core   +1 more source

Letter, 1949 April 27, from Carol Bridgman to Carson Robison [PDF]

open access: yes, 1949
1 page, Bridgman is in the Index Department at the American Society of Composer, Authors and ...
Bridgman, Carol
core   +1 more source

Developments in vertical Bridgman growth of large diameter GaAs [PDF]

open access: yes, 1997
Growth of GaAs crystals by the vertical Bridgman technique has several advantages over LEC — material with lower dislocation density, lower elastic stresses and higher homogeneity can be grown.
Sonnenberg, K.   +3 more
core   +1 more source

Double-Crucible Vertical Bridgman Technique for Stoichiometry-Controlled Chalcogenide Crystal Growth

open access: yesCrystal Growth & Design
Precise stoichiometry control in single-crystal growth is essential for both technological applications and fundamental research. However, conventional growth methods often face challenges such as non-stoichiometry, compositional gradients, and phase impurities, particularly in non-congruent melting systems.
Yingdong Guan   +6 more
openaire   +3 more sources

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