Results 71 to 80 of about 717 (187)

Cryogenic Focused Ion Beam Milling to Investigate the Anisotropic Magnetotransport Properties of Bismuth Microcrystals

open access: yesAdvanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
The highly anisotropic Fermi surface of bismuth results in variations in magnetotransport properties across different crystallographic directions, which can be characterized by studying microcrystals. To avoid the observed surface melting under room temperature Focused Ion Beam (FIB) irradiation, two low‐temperature FIB fabrication methods are proposed
Amaia Sáenz‐Hernández   +6 more
wiley   +1 more source

Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

open access: yes, 2002
© 2002 Published by Elsevier Science B.V. This work has been supported by CICYT under theproje ct ESP-98 1340 and by INTAS-ESA Project number 99 01814.Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical ...
Piqueras De Noriega, Francisco Javier   +4 more
core   +1 more source

Cadmium and Zinc‐Doped p‐type Sb2Se3 Single Crystals and Solar Cells

open access: yesAdvanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
Cd and Zn were assessed as candidate p‐type dopants in Sb2Se3 single crystals in concentrations between 1016‐1020 cm−3. Both are effective in inducing p‐type conductivity, however Cd doped crystals exhibit lower resistivity across a wider range of dopant levels.
Thomas P. Shalvey   +13 more
wiley   +1 more source

Studies on Growth of ZnGeP2 Single Crystals

open access: yes工程科学与技术, 2008
:Abstract:Single-phase ZnGeP2 polycrystals were successfully synthesized by modified two-zone vapor-transporting method(MTVM)and mechanic oscillations technique, directly from high pure(6N) Zn, Ge, and red P elements according to the ZnGeP2 stoichiometry
Zhao Xin   +7 more
doaj  

Thermal analysis of the vertical bridgman semiconductor crystal growth technique

open access: yes, 1982
The quality of semiconductor crystals grown by the vertical Bridgman technique is strongly influenced by the axial and radial variations of temperature within the charge. The relationship between the thermal parameters of the vertical Bridgman system and
Jasinski, T. J.
core  

Industrial Sustainability Policies: Systematic Literature Review and Research Directions

open access: yesCorporate Social Responsibility and Environmental Management, Volume 33, Issue 2, Page 1716-1739, March 2026.
ABSTRACT Public policies for industrial sustainability have proliferated in recent years, leading to a significant increase in research on the topic. Nevertheless, these studies remain fragmented, and a holistic, up‐to‐date map of research integrating current knowledge from the definition of the agenda setting and policy design to policy evaluation ...
Nunzia Zecchillo   +2 more
wiley   +1 more source

Double-Crucible Vertical Bridgman Technique for Stoichiometry-Controlled Chalcogenide Crystal Growth

open access: yesCrystal Growth & Design
Precise stoichiometry control in single-crystal growth is essential for both technological applications and fundamental research. However, conventional growth methods often face challenges such as non-stoichiometry, compositional gradients, and phase impurities, particularly in non-congruent melting systems.
Yingdong Guan   +6 more
openaire   +3 more sources

High energy resolution pixel detectors based on boron oxide vertical Bridgman grown CdZnTe crystals

open access: yes, 2014
CdZnTe crystals are used for the realization of Xray detectors. In particular, pixel detectors can be exploited for many application fields such as medical diagnostics, security, and industrial inspection.
SHI, YONGBIAO   +21 more
core   +1 more source

Growth and characterization of organic material 2-methylamino-5-chlorobenzophenone single crystal by modified vertical Bridgman technique

open access: yes, 2011
The organic material 2-methylamino-5-chlorobenzophenone single crystal has been grown by modified vertical Bridgman technique using the single wall ampoule with nano translation.
Rajesh, N. P.   +9 more
core   +1 more source

Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth

open access: yes, 2007
One of the reasons for the formation of twins and grain boundaries during the CdZnTe (CZT) crystal growth is the crystal-crucible interaction, typical of the vertical Bridgman technique.
F. Bissoli   +7 more
core   +1 more source

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