Results 11 to 20 of about 1,946 (248)

Vertical Cavity Surface Emitting Terahertz Laser [PDF]

open access: yesPhysical Review Letters, 2012
Vertical cavity surface emitting terahertz lasers can be realized in conventional semiconductor microcavities with embedded quantum wells in the strong coupling regime. The cavity is to be pumped optically at half the frequency of the 2p exciton state.
Kavokin, A.V.   +3 more
openaire   +5 more sources

Cavity solitons in vertical-cavity surface-emitting lasers [PDF]

open access: yesPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2014
We investigate a control of the motion of localized structures (LSs) of light by means of delay feedback in the transverse section of a broad area nonlinear optical system. The delayed feedback is found to induce a spontaneous motion of a solitary LS that is stationary and stable in the absence of feedback.
Tlidi, Mustapha   +5 more
openaire   +6 more sources

Reliability Analysis of Vertical Cavity Surface-Emitting Lasers Based on the Gamma Process

open access: yesIEEE Access, 2020
Due to the long life and high reliability of vertical cavity surface-emitting lasers, the performance degradation experiment cost is high, and the experiment cycle is long, because the degradation failure process of a semiconductor laser is a monotonic ...
Jing Lu, Bin Luo
doaj   +1 more source

A Simple Method to Build High Power PCSEL Array with Isolation Pattern Design

open access: yesCrystals, 2022
Photonic crystal surface-emitting lasers (PCSELs) hold promising properties of both edge emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs). They possess high output power while radiating light vertically, being thought of as the
Chia-Jui Chang   +6 more
doaj   +1 more source

Degradation Characteristics and Mechanism of High Speed 850 nm Vertical-Cavity Surface-Emitting Laser during Accelerated Aging

open access: yesPhotonics, 2022
The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a central wavelength at 850 nm is investigated via constant-current accelerated aging experiments.
Jide Zhang   +5 more
doaj   +1 more source

Serial data transmission at 224 Gbit/s applying directly modulated 850 and 910 nm VCSELs

open access: yesElectronics Letters, 2021
High‐speed discrete multitone serial data transmission over multi‐mode fibre at gross data rates up to 224 Gbit/s achieved with directly modulated oxide‐confined vertical cavity surface emitting lasers at 850 and 910 nm are presented.
N. Ledentsov Jr.   +10 more
doaj   +1 more source

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

open access: yesMicromachines, 2023
In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in
Kiran Saba   +7 more
doaj   +1 more source

Design Aspects in Photonic Crystal –Vertical Cavity Surface- Emitting Lasers Diode [PDF]

open access: yesEngineering and Technology Journal, 2010
The design issues for a current injection vertical cavity surface-emitting lasers (VCSEL) operating at 1550 nm is presented using photonic crystal (PC) technology.
Thaira Zakaria Al-Tayyar   +1 more
doaj   +1 more source

Instabilities in Spin-Polarized Vertical-Cavity Surface-Emitting Lasers

open access: yesIEEE Photonics Journal, 2011
We report a first comprehensive theoretical analysis of optically pumped spin-polarized vertical-cavity surface-emitting lasers, which combines the spin-flip model with the largest Lyapunov exponent technique to determine regions of stability and ...
Rihab Al-Seyab   +3 more
doaj   +1 more source

Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

open access: yesElectronics Letters, 2021
The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 
Sergey Blokhin   +11 more
doaj   +1 more source

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