Results 181 to 190 of about 2,834 (221)
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1979 International Electron Devices Meeting, 1979
This paper describes the design of a new family of VMOS power FETs exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and a field-plated groove termination to achieve high packing density and high ...
S. Kay, C.T. Trieu, B.H. Yeh
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This paper describes the design of a new family of VMOS power FETs exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and a field-plated groove termination to achieve high packing density and high ...
S. Kay, C.T. Trieu, B.H. Yeh
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Geometry effects in VMOS transistors
1978 International Electron Devices Meeting, 1978Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.
I.S. Bhatti, R.Y. Yau
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VMOS, UMOS technology simulation
28th International Conference on Information Technology Interfaces, 2006., 2006VMOS, UMOS ("V"-groove-metal-oxide-silicon) transistors drain and gate are formed in the groove of "V" or "U" form. Expanding channel area, therefore VMOS and UMOS structures may use in the power chips. Using VMOS, UMOS is saving 40% free space than using NMOS technology.
T. Kersys, D. Andriukaitis, R. Anilionis
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Fabrication and characterization of a VMOS EPROM
1977 International Electron Devices Meeting, 1977This paper presents experimental results for the performance of the VMOS EPROM device. The fabrication of the device is presented, followed by data for programmability and data retention. The device programs with lower applied voltages than other EPROM devices, and its projected data retention characteristic predicts a threshold drop of less than 1 ...
D.A. Draper, J.J. Barnes, F.B. Jenne
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On decomposition theorem for BMO and VMO
Complex Variables, Theory and Application: An International Journal, 2000We show that holds for an arbitrary proper sub-domain D of , where DL(Ddenotes the space of all Lipschitz continuous functions on D with respect to the quasihyperbolic metric.
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The characteristic studies of VMOS and UMOS
International Journal of Electronics, 1979Abstract Under the same process conditions in the conventional diffusion and anisotropic etching technology, short channel MOST with V-shape and U-shape arc fabricated under the same substrate conditions by the standard photolithographical technology.
KUO-LIANG PENG, S.-Y. YU
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1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1976
T. Rodgers +4 more
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T. Rodgers +4 more
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vmOS: A virtualization-based, secure desktop system
Computers & Security, 2017Abstract Centralized management is typically applied in modern operating system (OS) architecture; however, such systems are prone to crash when any certain component of the OS is explicitly damaged. The basic reason is that these OSes can rarely support a thoroughly secure or isolated environment either between OS kernel-mode components or between ...
Hongliang Liang +6 more
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IEEE Transactions on Electron Devices, 1979
J.R. Edwards, I.S. Bhatti, E. Fuller
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J.R. Edwards, I.S. Bhatti, E. Fuller
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