Results 171 to 180 of about 2,834 (221)
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On the Distance of an Analytic Function to VMO
Journal of the London Mathematical Society, 1986In this paper one deals mainly with the question whether a given analytic function on the unit disc belongs to VMO, the space of functions of vanishing mean oscilation, in terms of the cluster sets of the function. For bounded functions one proves that an analytic function whose cluster set at every point of the unit circle has the rational ...
Carmona, Juan José, Cufí, Julià
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A description of 𝐴_{∞}-weights for VMO
Proceedings of the American Mathematical Society, 2023We present a new characterization of Muckenhoupt A ∞ A_{\infty } -weights whose logarithm is in vanishing mean oscillation ( R ) (\mathbb {R}) in terms of vanishing Carleson measures on R + 2 \
Jinsong Liu, Fei Tao, Huaying Wei
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IEEE Journal of Solid-State Circuits, 1977
VMOS technology is discussed as it applies to semiconductor memory. A 45-ns 1-kbit static RAM with a die size of 81 mil/spl times/125 mil and a cell area of 3.0 square mils is presented. The device is fabricated with the original grounded-source version of the VMOS process.
T. Rodgers +5 more
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VMOS technology is discussed as it applies to semiconductor memory. A 45-ns 1-kbit static RAM with a die size of 81 mil/spl times/125 mil and a cell area of 3.0 square mils is presented. The device is fabricated with the original grounded-source version of the VMOS process.
T. Rodgers +5 more
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1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1978
This paper will discuss the application of VMOS technology in the design of one-transistor 150 μm2memory cells using existing photolithography. The development permits fabrication of a 64K RAM in a 16-pin package.
K. Hoffmann, R. Losehand, K. Zapf
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This paper will discuss the application of VMOS technology in the design of one-transistor 150 μm2memory cells using existing photolithography. The development permits fabrication of a 64K RAM in a 16-pin package.
K. Hoffmann, R. Losehand, K. Zapf
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Quaternionic Beltrami Equations with VMO Coefficients
The Journal of Geometric Analysis, 2013zbMATH Open Web Interface contents unavailable due to conflicting licenses.
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VMO solutions of the n-laplacian
Comptes Rendus de l'Académie des Sciences - Series I - Mathematics, 1997We consider the homogeneous Dirichlet problem for the equation -div(A(x, Du))=μ in an open bounded set μ ⊂ on, where the differential operator is like the N-Laplacian and where μ is a Radon measure. We prove that such a problem admits a solution υ which is locally BMO in Ω.
Vincenzo Ferone, Nicola Fusco
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Simulation of VMOS power transistors
International Journal of Electronics, 1984Abstract The paper describes a new model for simulation of the current/voltage characteristics of VMOS power transistors. The model includes the conventional MOS theory modified by mobility reduction, non-uniform concentration distribution in the channel, and the effective resistance of the drain region. Experimental results are discussed. A comparison
Y. K. FANG +4 more
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Necessary and sufficient condition for a VMO function
Applied Mathematics and Computation, 2012zbMATH Open Web Interface contents unavailable due to conflicting licenses.
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ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453), 2002
Partial-product reduction circuits (compressors) are of capital importance in the design of high performance parallel multipliers. This paper proposes compressor designs based on threshold gates which have been implemented as vMOS circuits. A typical block, a (4,2) compressor, is fully developed. Data for a (6,2) compressor are also provided.
J.M. Quintana +3 more
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Partial-product reduction circuits (compressors) are of capital importance in the design of high performance parallel multipliers. This paper proposes compressor designs based on threshold gates which have been implemented as vMOS circuits. A typical block, a (4,2) compressor, is fully developed. Data for a (6,2) compressor are also provided.
J.M. Quintana +3 more
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Floating output VMOS amplifier
IEEE Transactions on Circuits and Systems, 1989A differential input-differential output floating amplifier is described. The essential characteristics of the system are defined by three feature-of-merit parameters. A practical design using VMOS power transistors is also presented and the experimental measured parameters are compared to the theoretical estimates. >
J. Moncassin, M. Rabii, H. Benoit
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