Results 161 to 170 of about 2,834 (221)

Incidence and Risk Factors for Arthrogenic Muscle Inhibition in the Early Postoperative Period After ACL Reconstruction. A Cohort Study From the SANTI Study Group. [PDF]

open access: yesOrthop J Sports Med
Sonnery-Cottet B   +8 more
europepmc   +1 more source

Defect Engineering in MoS<sub>2</sub> Monolayers on Au(111): Insights from Combined Experimental and Theoretical Approaches. [PDF]

open access: yesJ Phys Chem C Nanomater Interfaces
Ascrizzi E   +6 more
europepmc   +1 more source

Second-order elliptic equations with variably partially VMO coefficients

open access: yesJournal of Functional Analysis, 2009
The solvability in Wp2(Rd) spaces is proved for second-order elliptic equations with coefficients which are measurable in one direction and VMO in the orthogonal directions in each small ball with the direction depending on the ball.
N V Krylov
exaly   +2 more sources

A 64Kb VMOS RAM

1979 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1979
This paper will cover a 64Kb dynamic RAM built with VMOS technology, featuring a folded bit line/sense amplifier configuration.
D. Essl, R. Losehand, B. Rehn
openaire   +1 more source

VMOS electrostatic protection

Microelectronics Reliability, 1978
Present state of the art MOS devices with 1000 A thick gate oxides have breakdown voltages in the 60-80 volts range. VMOS devices with the same oxide thickness have lower breakdown voltages (25-30 volts) due to higher fields in the oxide at the bottom of the V-groove.
I. S. Bhatti, E. Fuller, F. B. Jenne
openaire   +2 more sources

Home - About - Disclaimer - Privacy