Results 151 to 160 of about 6,665,226 (290)
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration
Advanced Electronic Materials, EarlyView.Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti +6 more
wiley +1 more source
Nonlinear Dynamics and Invariants of Motion in ReRAM Cells
Advanced Electronic Materials, EarlyView.A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco +5 more
wiley +1 more source
EntroMEMS: Proof-of-Concept Integration of Quantum-Derived Initialization and MEMS Entropy Acquisition on an ESP32. [PDF]
Sensors (Basel)Georgiev BA.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee +11 more
wiley +1 more source
Civilizational ischemia and the astro-neuraxis: A neurosurgical framework for planetary-scale artificial intelligence infrastructure. [PDF]
Surg Neurol IntKim JS.
europepmc +1 more source
Conventional Von Neumann and Neuromorphic Architecture of AI Chips
Highlights in Science, Engineering and TechnologyIn the background of the shortage of computing power in the training AI field, the current solutions and future outlooks will be shown if they tackle this dilemma. From the continuation of the traditional computer structure, Von Neumann structure, the three types of AI chips GPU, FPGA, and ASIC will be introduced and state their developments and ...
openaire +1 more source
Advanced Electronic Materials, EarlyView.Ru–Pt alloying suppresses filament overgrowth and an AlOx switching layer enhances reliable switching, hopping transport enables conductance tuning via hopping distance modulation, Ru7Pt3/AlOx/Pt device yields 16 low‐noise conductance states, a 2–3‐fold improvement over prior Ru‐based CBRAM, and CSNN inference on FMNIST reaches 81% accuracy with 103 ...
Sangmin Lee +10 more
wiley +1 more source