Results 171 to 180 of about 6,665,226 (290)
Resistively switching TiN/Hf0.5Zr0.5/Au valance‐change memory devices show period‐doubling bifurcations, arising from competing influences of filamentary counter‐eightwise filamentary switching and eigthwise electrochemical oxygen exchange at the active electrode.
Sebastian Obernberger +4 more
wiley +1 more source
Self-powered intelligence for personalized healthcare. [PDF]
Cai Y +10 more
europepmc +1 more source
Das Echo oder Anekdoten, Erzählungen und charakteristische Züge aus der Vorzeit und Gegenwart / Herausgegeben von Sebaldo, Verfasser von Leipzigs Vorzeit [i.e. Johann Carl August Neumann] ; H. 1 [PDF]
DAS ECHO ODER ANEKDOTEN, ERZÄHLUNGEN UND CHARAKTERISTISCHE ZÜGE AUS DER VORZEIT UND GEGENWART / HERAUSGEGEBEN VON SEBALDO, VERFASSER VON LEIPZIGS VORZEIT [I.E. JOHANN CARL AUGUST NEUMANN] ; H. 1 Das Echo oder Anekdoten, Erzählungen und charakteristische
Neumann, Johann Carl August
core
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Controlled analog Ising machine: An accelerated and accuracy-enhanced intelligent solver for edge computing. [PDF]
Li L, Pan Y, Wang W, Lü J, Gao Q.
europepmc +1 more source
A detailed connectionist architecture is described which is capable of relating psychological behavior to the functioning of neurons and neurochemicals. The need to be able to build, repair and modify current electronic systems with billions of hardware ...
L. Andrew Coward
core
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley +1 more source
From Device-Level Implementation to In-Sensor Computing in Memristive-Device-Based Biosensors: A Review. [PDF]
Ryu H, Lee WC, Lee J.
europepmc +1 more source
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad +4 more
wiley +1 more source
Individual, High-Precision 3D Mandibular Model for Finite Element Analysis of Three-Unit Bridges: A Biomechanical Pilot Study. [PDF]
Pelsőczi-Kovács I +3 more
europepmc +1 more source

