Results 161 to 170 of about 80,250 (296)

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

Thermally Modulated Metasurface Sensor for Dynamic and Time‐Resolved Isolation of Extracellular Vesicles

open access: yesAdvanced Materials, EarlyView.
A thermally adaptive plasmonic metasurface, functionalized with poly(N‐isopropylacrylamide) (PNIPAM) and anti‐CD63 antibodies, enables precise, on‐demand capture and release of extracellular vesicles (EVs). Delivering high recovery, improved purity, and intact vesicle structure, the platform offers a versatile, label‐free solution for real‐time EV ...
Beyza Nur Kucuk   +7 more
wiley   +1 more source

Selective Wet Etching for Scalable Nanofabrication of Patterned MXene Thin Films. [PDF]

open access: yesNano Lett
Favelukis B   +8 more
europepmc   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

open access: yesAdvanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair   +3 more
wiley   +1 more source

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium. [PDF]

open access: yesNanomaterials (Basel), 2020
Xie L   +14 more
europepmc   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

Design and Fabrication of Silicon Pressure Sensors Based on Wet Etching Technology. [PDF]

open access: yesMicromachines (Basel)
Li F   +9 more
europepmc   +1 more source

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