Results 141 to 150 of about 23,327 (300)
Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing. [PDF]
Materials (Basel), 2021 Kozłowski P +7 more
europepmc +1 more source
Deep-UV, Light-Assisted, Wet Etching of Compound Semiconductors
, 1983 Deep-UV, laser-light-assisted, wet etching of compound semiconductors is reported. As ccmpared to results with visible light, the etching rates per unit power density in the ultraviolet are considerably faster; a factor of >30 is seen under typical ...
D. V. Podlesnik +2 more
core +1 more source
Advanced Materials, EarlyView.Solvent‐mediated reactivity control of Lewis‐paired dopants enables highly efficient, finely tunable, and stable doping of organic semiconductors. The optimally doped semiconductor films exhibit superior thermoelectric performance and doping stability, feature delocalized polarons along structurally ordered polymer backbones, and outperform ...
Sang Beom Kim +5 more
wiley +1 more source
Ultra-Narrow Metallic Nano-Trenches Realized by Wet Etching and Critical Point Drying. [PDF]
Nanomaterials (Basel), 2021 Jeong J +4 more
europepmc +1 more source
Wet etching of AZ31B magnesium alloy with nitric acid
, 2022 Wet etching is a micromachining process in which a material is immersed in liquid chemicals or etchants to remove unwanted sections from the surface. The process is generally known as cost-effective, reliable and suitable for high-production environments.
Çakır, Orhan
core
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Advanced Materials, EarlyView.Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice. [PDF]
Nanomaterials (Basel), 2021 Xie L +13 more
europepmc +1 more source
Advanced Materials, EarlyView.A thermally adaptive plasmonic metasurface, functionalized with poly(N‐isopropylacrylamide) (PNIPAM) and anti‐CD63 antibodies, enables precise, on‐demand capture and release of extracellular vesicles (EVs). Delivering high recovery, improved purity, and intact vesicle structure, the platform offers a versatile, label‐free solution for real‐time EV ...
Beyza Nur Kucuk +7 more
wiley +1 more source
Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics
Advanced Materials, EarlyView.“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair +3 more
wiley +1 more source
Research and Progress of Wet Etching for GaN
, 2005 回顾了近年来GaN材料湿法刻蚀的研究进展,着重探讨了GaN材料光辅助化学湿法刻蚀的机理、p-GaN材料湿法刻蚀的难点以及湿法刻蚀在GaN材料研究中的应用。The progress of wet etching for GaN is reviewed. We have discussed the mechanism of photo-assisted chemical wet etching,the difficulty of p-GaN wet etching and the application ...
陈朝, 黄生荣
core