Results 101 to 110 of about 29,046 (313)
Designed Lewis Acid–Base Passivation for High Performance Perovskite Solar Cells
ABSTRACT Silicon's high cost and long energy payback time remain major barriers to the global expansion of solar power. In contrast, metal–halide perovskites offer abundant, solution‐processable absorbers, and have achieved efficiencies of 25%–30%, positioning them as strong competitors to silicon.
Afna Manaf +4 more
wiley +1 more source
A Holistic Stabilization of the Anode in Lithium‐Sulfur Batteries Through a Ternary Alloy Fusion
LiTeAl anodes fabricated through a scalable thermal fusion technique holistically addresses the stability issues faced by lithium‐metal anodes in lithium–sulfur batteries. Aluminum forming a skeletal network with lithium suppresses dendrite growth and enhances energy density, while tellurium forming a robust SEI facilitates Li+‐ion flow.
Akhil Shenoy, Arumugam Manthiram
wiley +1 more source
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su +7 more
doaj +1 more source
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance.
Qimin Huang +8 more
doaj +1 more source
ABSTRACT Perovskite solar cells (PSCs) are promising next‐generation photovoltaics. The high performance of PSCs is attributed to the long carrier lifetimes of perovskite photoabsorbers. However, the carrier lifetimes of polycrystalline perovskite layers, which serve as the photoabsorbers in practical PSCs, have remained limited to several tens of ...
Naoyuki Nishimura +2 more
wiley +1 more source
Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers
This study proposed an innovative method for growing gate oxide on silicon carbide (SiC), where silicon oxide (SiO2) was fabricated on a deposited Al2O3 layer, achieving high quality gate oxide.
Zhenyu Wang +8 more
doaj +1 more source
Optical studies of wide-bandgap HgCdTe material used in potential-and quantum-well structures
D A Andryushchenko +4 more
openalex +1 more source
II-VI Wide-Bandgap Semiconductor Device Technology: Stability and Oxidation
Ghenadii Korotcenkov
openalex +2 more sources
Blue phosphorescent OLEDs remain limited by poor operational stability. Here, a unified analytical framework integrating transient photoluminescence and magneto‐electroluminescence is developed to correlate intrinsic material photophysics with electrically driven degradation.
Hakjun Lee, Bum June Park, Taekyung Kim
wiley +1 more source
Wide and ultra-wide bandgap oxides
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity.
Perez-Tomas, Amador +7 more
openaire +1 more source

