Results 101 to 110 of about 26,645 (265)
Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang +14 more
wiley +1 more source
Diamond surfaces terminated with a silicon layer (C–Si) can induce a two-dimensional hole gas (2DHG) layer at the insulator/diamond interface, enabling the realization of p-channel metal–oxide-semiconductor field-effect transistors (MOSFETs). Through two
Yu Fu +7 more
doaj +1 more source
Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers
This study proposed an innovative method for growing gate oxide on silicon carbide (SiC), where silicon oxide (SiO2) was fabricated on a deposited Al2O3 layer, achieving high quality gate oxide.
Zhenyu Wang +8 more
doaj +1 more source
Phase Engineering of Atomically Precise Nanoclusters (APNCs) of Gold and Beyond
Engineering the structural phase of materials is of paramount importance for both fundamental research and practical applications. In this Review, we summarize the recent progress in controlling the phases of atomically precise nanoclusters (APNCs) of gold, silver and copper, as well as bimetallic systems. The phase‐enabled material properties of APNCs
Yitong Wang +4 more
wiley +1 more source
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su +7 more
doaj +1 more source
This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a ...
Lu Liu +5 more
doaj +1 more source
Wide-Bandgap Semiconductors for Radiation Detection: A Review
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described.
openaire +4 more sources
Trions as Fundamental Species in Chemically Doped Polymer Semiconductors
This work shows that exciton–charge carrier coupling in doped polymer semiconductors gives rise to multi‐particle states, including trions—quasiparticles consisting of two holes and one electron under p‐doping—and bound exciton‐hole pairs, as identified through spectroscopic and theoretical analysis.
Hongmo Li +23 more
wiley +1 more source
Metal halide perovskites (MHPs) have been proven to have excellent direct X‐ray detection properties due to their high carrier lifetime product, strong X‐ray absorption ability, a low electron‐hole pair creation energy, and excellent charge transport ...
Yanshuang Ba +11 more
doaj +1 more source
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji +15 more
wiley +1 more source

