Results 121 to 130 of about 29,046 (313)

Wide bandgap report debut

open access: yesIII-Vs Review, 1997
AbstractTo be published this Spring, the first edition of a new report from the publishers of III–Vs Review will provide a complete overview of the markets and technologies of gallium nitride and related wide bandgap materials. It forecasts markets not only for LED and laser devices but also for source materials and epitaxial equipment.
openaire   +1 more source

Hybrid Solar Cell/Triboelectric Nanogenerator Based on Stable Two‐Dimensional Covalent Organic Frameworks

open access: yesAdvanced Functional Materials, EarlyView.
This study highlights the integration of stable two‐dimensional covalent organic framework (COF) films as photoactive layers in hybrid nanoenergy devices. The results demonstrate their capacity to generate electricity under both sunny and rainy conditions, showcasing versatility and resilience.
Joab D. Guerrero   +13 more
wiley   +1 more source

Electro-Thermal Improvement in a β-Ga2O3 Cage-Integrated Slanted-Fin MOSFET

open access: yesMicromachines
Electro-thermal improvement is critical for β-Ga2O3 power devices to mitigate self-heating while maintaining high-voltage capability. Here, we propose a β-Ga2O3 cage-integrated slanted-fin MOSFET (C-SFMOSFET).
Jianing Li   +4 more
doaj   +1 more source

MXene Wrapped Magnetic Mesocrystals for Durable Redox Catalytic Cancer Therapy and Responsive MRI

open access: yesAdvanced Functional Materials, EarlyView.
Conformal wrapping of ultrathin Ti3C2Tx MXene nanosheets on Fe3O4 mesocrystals creates topology‐stabilized Schottky junctions that direct photoinduced electron transfer under NIR irradiation. The unique architecture sustains Fenton catalysis, promotes continuous hydroxyl radical production, and provides photo‐responsive MRI contrast.
Min Jun Ko   +10 more
wiley   +1 more source

Controlled Engineering of 2D Alkali‐Iron‐Chloride Compounds and Lateral Quantum Heterostructures Within Confined Graphene Nanoreactors

open access: yesAdvanced Functional Materials, EarlyView.
This work presents a programmable atomic engineering strategy for 2D materials using Å‐scale nanoreactors formed by bilayer graphene (BLG) intercalation. A new class of alkali‐iron‐chloride compounds, along with lateral heterostructures composed of monolayer alkali halides and iron chlorides, is revealed.
Haiming Sun   +6 more
wiley   +1 more source

Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC [PDF]

open access: green, 2021
Yasin Gunaydin   +8 more
openalex   +1 more source

Wide-Bandgap Semiconductors for Radiation Detection: A Review

open access: yesMaterials
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described.
openaire   +4 more sources

Steering Oxygen Activation Pathways via Redox Dual‐Defects in 2D Hydrated WO3 for High‐Yield Singlet Oxygen Evolution

open access: yesAdvanced Functional Materials, EarlyView.
Redox dual‐defects (Cs substitution and O vacancies) in 2D hydrated WO3 steer O2 activation toward selective singlet oxygen evolution. WO‐CO achieves 8.6–15.8 times higher 1O2 production than single‐defect or pristine catalysts, enabling efficient pollutant mineralization via a pathway‐selective photocatalytic mechanism.
Sheng‐Qi Guo   +8 more
wiley   +1 more source

Bandgap‐Engineered AlGaAs/GaAs Heterostructures for Wavelength‐Selective Dual‐Polarity Photoelectrochemistry

open access: yesAdvanced Functional Materials, EarlyView.
Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao   +9 more
wiley   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

open access: yesAdvanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici   +8 more
wiley   +1 more source

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