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Control of trace elements content in solid-phase extraction sorbent by x-ray fluorescence analysis

AIP Conference Proceedings, 2020
Wavelenght dispersive x-ray fluorescence spectrometry was applied to determine the concentration of trace elements in a solid-phase extraction sorbent. Reference materials were synthesized by analytes sorption from solutions of known concentration.
E. V. Kochergina   +5 more
openaire   +1 more source

Biodiesel Trace Element Analysis by Energy Dispersive X-ray Fluorescence Spectrometry Using Magnetic Solid-Phase Microextraction

Energy & Fuels, 2020
One parameter to examine biodiesel quality has to do with the existence of metals, given that their presence can negatively affect fuel stability, by virtue of the alteration to their physicochemic...
Lucilia A. Meira   +6 more
openaire   +1 more source

Enhanced analysis of particles and vapor phase decomposition droplets by total-reflection X-ray fluorescence

Spectrochimica Acta Part B: Atomic Spectroscopy, 1999
Abstract The semiconductor industry requires lower and lower detection limits for surface metal contamination on Si wafers with each new reduction in feature size of semiconductor devices. The combination of total reflection X-ray fluorescence and a preconcentration step like vapor phase decomposition provides the level of detectability needed for ...
M Funahashi   +4 more
openaire   +1 more source

Multi-phase solids and the intensity-concentration relationship in X-ray fluorescence analysis: a Monte Carlo simulation

The Analyst, 1984
A correction algorithm for quantitative X-ray analysis is suggested for samples with a non-homogeneous distribution of elements over the matrix. The treated data were obtained by Monte Carlo simulation of the X-ray fluorescence processes in a binary composite. As an example, a mixture of iron and chromium was studied.
Jef A. Helsen, Bruno A. R. Vrebos
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Vapor phase treatment–total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface

Spectrochimica Acta Part B: Atomic Spectroscopy, 2013
Abstract Vapor phase treatment (VPT) was under investigation by the International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) to improve the detection limit of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis of silicon wafers.
Hikari Takahara   +8 more
openaire   +1 more source

Tunable excitation X-ray fluorescence spectroscopy in phase analysis of high-Tcsuperconductors

Journal of Physics: Condensed Matter, 1994
Tunable excitation x-ray fluorescence spectroscopy in phase analysis of high-Tc ...
S M Butorin   +12 more
openaire   +1 more source

Analysis of Low Metallic Contamination on Silicon Wafer Surfaces by Vapor-Phase Treatment and Total Reflection X-ray Fluorescence Analysis

Japanese Journal of Applied Physics, 2006
We have developed a new practical method for quantifying metallic contaminants with concentrations as low as 109 atoms/cm2 on silicon wafer surfaces. It is named “VPT-TXRF” and uses vapor-phase treatment (VPT) with a total reflection X-ray fluorescence analysis (TXRF) system.
Ayako Shimazaki   +3 more
openaire   +1 more source

Energy dispersive X-ray fluorescence spectrometry characterization of wall mortars with principal component analysis: Phasing and ex situ versus in situ sampling

Journal of Cultural Heritage, 2020
Abstract Mortared stone walls at the Coriglia, Castel Viscardo archaeological excavation site near Orvieto, Italy were analyzed via portable X-ray fluorescence (XRF) spectrometry to better understand their construction sequence and phasing. Data were collected ex situ for intact, ground, and fused bead samples and in situ at the site and evaluated ...
Mary Kate Donais   +5 more
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Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

Spectrochimica Acta Part B: Atomic Spectroscopy, 2005
Abstract Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps.
D. Hellin   +9 more
openaire   +1 more source

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