Results 151 to 160 of about 8,288,511 (300)

A Boost-Assisted Multi-Mode Bidirectional Resonant DC-DC Converter for Wide-Battery-Voltage-Range Applications. [PDF]

Sensors (Basel)
Liu W, Zhang Y, Cai L, Li T, Deng F, Yuan Y, Zhou Z, Zeng H.   +7 more
europepmc   +1 more source

Atomic‐Scale Detection of Néel Vector Switching in the Single‐Layer A‐Type Antiferromagnet Cr2S3‐2D

Advanced Materials, EarlyView.
Interfacial electron donation from graphene redistributes charge within single‐layer Cr2S3‐2D, preferentially accumulating at the lower Cr/S plane. The resulting minute magnetic imbalance lifts the equivalence of the two magnetic sublayers, enabling atomic‐resolution identification and field‐induced control of Néel‐vector states in a two‐dimensional A ...
Affan Safeer, Calisa Dias, Mahdi Ghorbani‐Asl, Abdallah Karaka, Pradyumna Bawankule, Weibin Li, Pierluigi Gargiani, Wouter Jolie, Arkady V. Krasheninnikov, Amilcar Bedoya‐Pinto, Thomas Michely, Jeison Fischer   +11 more
wiley   +1 more source

Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO₃/PMN-PT Heterostructures. [PDF]

Materials (Basel)
Yang J, Du Q.
europepmc   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source

System-Level Hardware-Waveform Co-Design for Micro-UAV Radar Sensors: Suppressing Noise Folding in Extreme SWaP-C SSDBF Arrays. [PDF]

Sensors (Basel)
Dai X, Xie K, Wang Y.
europepmc   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

Design of a single inductor bidirectional DC converter for V2V energy transfer: On board charger architecture. [PDF]

Sci Rep
Mostafa HH, Ibrahim AM, Amer FZ, Sawires EF.   +3 more
europepmc   +1 more source

Ion Concentration and Voltage Imaging With Fluorescent Nanodiamonds

Advanced Materials, EarlyView.
We demonstrate reversible switching between the fluorescent NV0 and the dark NV+ state, in sub‐30 nm FNDs via surface oxidation and hydrogenation, respectively. In an electrochemical cell, we show that the fluorescence from hydrogenated particles enables all‐optical imaging of voltages and ion concentrations at the micrometer scale.
Patrick Voorhoeve, Alessandro Mameli, Hiroshi Abe, Takeshi Ohshima, Qiang Sun, Anita Quigley, Rob Kapsa, Nikolai Dontschuk, Philipp Reineck   +8 more
wiley   +1 more source

An Adaptive Gate-Side Feedback Active Gate Driver for GaN Devices with Optimized Switching Performance. [PDF]

Micromachines (Basel)
Zhang Y, Huang B, Wu T, Wang Z, Zhang Q, Zhang D, Lei J, Min R, Tong Q.   +8 more
europepmc   +1 more source

Directing Near‐Perfect (001) Orientation in Wafer‐Scale BiOI Thin Films via Halide‐Mediated van der Waals Stacking

Advanced Materials, EarlyView.
Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur, Ashakiran Maibam, Hayden Tuohey, Tony Nguyen, Mei Xian Low, Sumeet Walia, Zijun (June) Yong, Ravichandar Babarao, Daniel Gomez, Enrico Della Gaspera, Joel van Embden   +10 more
wiley   +1 more source