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Intense electroluminescence from ZnO nanowires
Journal of Materials Chemistry C, 2015Intense electroluminescence has been obtained from ZnO nanowires with holes injected from p-ZnO:Sb preparedviaa high pressure high temperature method.
Xun Yang +8 more
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ZnO nanowire field electron emitters
2015 28th International Vacuum Nanoelectronics Conference (IVNC), 2015This talk gives an overview on the precisely-controlled fabrication, optimization of the field electron emission performance, and the potential application of the zinc oxide nanoemitter arrays. The related nanofabrication methods, material and device physics are discussed.
Juncong She +4 more
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Growth of electrodeposited ZnO nanowires
2012 IEEE Sensors, 2012Direct current electrodeposition method was used to deposit zinc oxide (ZnO) nanowire arrays from aqueous zinc chloride in ammonium chloride solution at 70° C onto 10 mm × 10 mm anodic alumina oxide (AAO) templates. The AAO templates featured an average pore diameter of 80 nm.
Joshua Sunday +2 more
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Optical Applications of ZnO Nanowires
IEEE Journal of Selected Topics in Quantum Electronics, 2011This paper discusses different aspects of optical applications of ZnO nanowires NWs. After a description of the relevant synthesis and fabrication techniques, light-emitting diodes based on ZnO NW and NW arrays are introduced and different experimental realizations from the literature are discussed.
Apurba Dev +2 more
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Electroluminescence from annealed ZnO nanowires
2006 Sixth IEEE Conference on Nanotechnology, 2006We report the effect of thermal annealing on the room-temperature electroluminescence in vertically oriented ZnO nanowires. Ultra-violet luminescence around 390 nm and a broad defect-related band centered at 620 nm are observed. The ZnO nanowires are grown in electrodeposition on SnO 2 -coated glass substrates, employing a technique that is suitable ...
R. Konenkamp +3 more
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Diffusion thermopower in ZnO nanowires
AIP Conference Proceedings, 2014Low temperature acoustic phonon limited diffusion thermopower (Sd) in wurtzite ZnO nanowires is studied considering inelasticity of the scattering. An expression for scattering rate due to piezoelectric (PZ) acoustic phonon coupling is given. Sd calculated in elastic approximation, used in literature, is found to overestimate.
S. M. Galagali, N. S. Sankeshwar
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Nanoindentation of vertical ZnO nanowires
Physica E: Low-dimensional Systems and Nanostructures, 2007We report the experimental observations of buckling instabilities of vertical well-aligned single-crystal ZnO nanowires prepared on ZnO:Ga/glass templates. It was found that critical buckling load and buckling energy of the ZnO nanowires were 215mN and 3.69 10 11 J, respectively.
S.J. Young +4 more
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Pt ∕ ZnO nanowire Schottky diodes
Applied Physics Letters, 2004Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 °C and very low (1.5×10−10A, equivalent to 2.35Acm−2, at −10V) reverse currents.
Y. W. Heo +6 more
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Nonlinear optics with ZnO nanowires
physica status solidi (b), 2009AbstractSecond‐harmonic generation and two‐photon induced photoluminescence from arrays of ZnO nanowires and single nanowires under excitation with femtosecond pulses is experimentally studied. The ratio of relevant components of the nonlinear χ(2) tensor is obtained.
Tobias Voss +3 more
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ZnO Nanowires Synthesis and Characterization
ECS Meeting Abstracts, 2016In this study, a two-zone furnace had been used to grow ZnO nanowires (NWs) on Si (100) substrates by thermal evaporation method via the vapor-solid (VS) mechanism. We mixed zinc oxide powder and graphite powder as source. By controlling the growth temperature, source temperature, growth pressure, source amount, growth time, growth position and carrier
Ping-Hsin Tsai, Chiu-yen Wang
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