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Optical Investigation of ZnO Nanowires
Acta Physica Polonica A, 2010 In this study we report the application of synchrotron X-ray fluorescence, photoluminescence and Raman scattering techniques to the analysis of the incorporation of impurities in unintentionally doped ZnO nanowires. Highly ordered one-dimensional ZnO arrays were fabricated by an oxidation process of Zn metal electrodeposited in nanoporous anodic ...
G. Martínez-Criado +10 more
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ZnO Nanowires for Biosensing Applications
Zinc oxide Nanowires (ZnO-NWs) are promising biosensor materials and hold the key to overcoming challenges in the field. This chapter provides an introductory overview of biosensing technology, focusing on the fundamental principles and comparing ZnO-NWs with other nanostructures regarding the surface area, reactivity, electrical properties, charge ...
G.M. Mehedi Hossain +4 more
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Doping studies of ZnO nanowires
, 2015 The work presented in this thesis aims to study the p-doping of ZnO nanowires by two different methods: in-situ (during growth) and ex-situ by diffusion of impurities in the nanowires from a gas phase. ZnO nanowires were prepared by MOCVD and characterized by different techniques: SEM, TEM, EDX, XPS, nano-Auger, XRD, SIMS, atom probe tomography, Raman,
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Demonstration of state or the art nanostructring results for ZnO nanowires and resulting gas sensing application.
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The Journal of Physical Chemistry B, 2004
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger +3 more
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ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger +3 more
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Nanoscale, 2011
The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
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The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
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Nano Letters, 2008
Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs ...
Lee, ST +9 more
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Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs ...
Lee, ST +9 more
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ZnO Spintronics and Nanowire Devices
MRS Proceedings, 2004ABSTRACTZnO is a very promising material for spintronics applications, with many groups reporting room temperature ferromagnetism in films doped with transition metals during growth or by ion implantation. In films doped with Mn during PLD, we find an inverse correlation between magnetization and electron density as controlled by Sn doping.
S. J. Pearton +9 more
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Chemical Sensing with ZnO Nanowire
IEEE Sensors, 2005., 2005Zinc oxide nanowires were configured as n-channel field effect transistors. These transistors were implemented as chemical sensors for detection of various gases. Nanowire's ammonia sensing behavior was observed to switch from oxidizing to reducing when temperature increased from 300 to 500 K.
null Zhiyong Fan, null Jia G. Lu
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ZnO Nanowire-Based UV Photodetector
Journal of Nanoscience and Nanotechnology, 2010ZnO nanowire-based ultraviolet (UV) photodetector was proposed and fabricated by depositing interdigitated Au film on vertically well aligned ZnO nanowires. It was found that the deposited Au film form good ohmic contact with the underneath ZnO nanowires.
Chien-Yuan, Lu +5 more
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