Results 31 to 40 of about 36,994 (231)
Journal of Physics C: Solid State Physics, 1982 Ionic models are commonly used in defect studies in sixfold-coordinated I-VII and II-VI compounds. The authors discuss the use of models of this type for defects in ZnSe, notably for the cation vacancy centre. They show that methods based on the shell model plus empirical interatomic potentials provide a powerful and important tool, complementary to ...
HARDING, JH, STONEHAM, AM
openaire +2 more sources
Design of Three-Layer Antireflection Coating for High Reflection Index Lead Chalcogenide [PDF]
Materials Research, 2019 Antireflection coatings (ARC), not only reduce the reflection of the incident radiation but also protect the surface from environmental degradations. In present study, three- layer design was theoretically calculated and experimentally realized on the ...
Muhammad Mansoor +4 more
doaj +2 more sources
Spin-dependent resonant tunneling in ZnSe/ZnMnSe heterostructures
, 2005 Using the transfer matrix method and the effective-mass approximation, the effect of resonant states on spin transport is studied in ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric and magnetic fields.
A. Saffarzadeh +27 more
core +1 more source
Schottky barrier heights at polar metal/semiconductor interfaces [PDF]
, 2003 Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface termination.
A. Baldereschi +62 more
core +2 more sources
Opto-Electronic Advances, 2022 The optical nonlinearity in polycrystalline zinc selenide (ZnSe), excited with 775 nm, 1 kHz femtosecond laser pulses was investigated via the nonlinear transmission with material thickness and the Z scan technique.
Qianliang Li +4 more
doaj +1 more source
Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures
, 2005 We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons.
A. J. A. de Oliveira +12 more
core +3 more sources
Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)
, 2006 We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study.
B. Lépine +13 more
core +3 more sources
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Advanced Functional Materials, EarlyView.Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation
, 2003 We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch of the Fe minority-spin states with the semiconductor conduction states can
Baranger H U +12 more
core +1 more source
Advanced Functional Materials, EarlyView.Amorphous calcium phosphate (ACP) microparticles with long‐term and thermal stability are prepared with or without collagen using a scalable one‐pot spray‐drying process. Under simulated physiological conditions, they crystallize into biomimetic bone mineral and, when combined with collagen, form extrudable, fibrillar bone‐like 3D constructs.
Camila Bussola Tovani +13 more
wiley +1 more source