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温度因素对盆式绝缘子缺陷电场分布影响的仿真研究

Gaoya dianqi
温度是影响气体绝缘金属封闭组合电器（GIS）中典型绝缘缺陷形成与发展的重要因素之一。为探究温度因素对盆式绝缘子缺陷电场分布的影响，文中利用有限元软件建立了252 kV GIS电—热—流多物理场耦合模型，得到了不同导体温度下、处于不同位置的气泡、裂纹及悬浮金属微粒缺陷下绝缘子表面的电场分布，并通过表面电荷分布与计算气体临界击穿场强进一步分析电场变化规律。结果表明：导体温度升高，3种缺陷下的绝缘子表面最大场强都随之增大，裂纹缺陷下增幅最大，悬浮金属微粒下最小。温度变化对电场的影响与绝缘缺陷类型、位置有关 ...
顾媛丽, 康朝阳, 王绪亮, 韩克俊, 刘洪顺, 李清泉   +5 more
doaj  

[Finite-element simulation and experimental investigation of nanosecond transcranial pulsed electric field propagation and distribution in a three-dimensional brain model]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Chen Y, Yao C, Yan F, Xiao P, Lu X.
europepmc   +1 more source

[Inductance calculation method for transcranial magnetic stimulation figure-8 coils Accounting for spatial mutual inductance]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Fan Y, Wu N, Li J, Meng W, Wu Z, Wang P, Zhang C, Wu C, Huo X, Zhang G.   +9 more
europepmc   +1 more source

[Coupling characteristics of cellular electroporation and electrodeformation based on dynamic Young's modulus: influence of membrane thickness]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Wei X, Zou S, Guo F, Liu L.
europepmc   +1 more source

[Functional requirements and research advances of antimicrobial hydrogels for combat trauma wound repair]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Wu B, Wei G.
europepmc   +1 more source

[Dual-stream temporal-frequency convolutional network with additive attention for auditory attention decoding]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Lin X, Zhang S, Huang S.
europepmc   +1 more source

[Pediatric thunderstorm asthma in China: epidemiological characteristics and comprehensive management]. [PDF]

Zhongguo Dang Dai Er Ke Za Zhi
Han P, Shen KL.
europepmc   +1 more source

[Research progress on the acquisition technology of magnetocardiography]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Kang B, Dong M, Chang Y, Wang J, Zhao T, Fan L.   +5 more
europepmc   +1 more source

氧化铝陶瓷典型缺陷结构对电场分布的影响研究

Gaoya dianqi
在高电压环境下，显微缺陷结构的存在会导致绝缘材料内产生电场畸变，是影响氧化铝陶瓷绝缘强度的重要因素之一。为了研究高电压环境下氧化铝陶瓷典型缺陷结构对材料内电场分布的影响，建立了包含缺陷结构的细观陶瓷结构模型，并采用有限元软件分析了晶粒尺寸、玻璃相以及气孔的存在对电场分布的影响规律。结果表明：晶粒尺寸对电场畸变程度的影响较小，而玻璃相的存在对电场畸变程度的影响较大。玻璃相对电场畸变的影响与晶界方向有关，晶界与电场方向夹角越大，玻璃相处的电场畸变程度越大。与晶粒尺寸和玻璃相的影响相比 ...
李平安, 张朋, 李秀峰, 王文成, 王小强   +4 more
doaj  

[A simulation study of photothermal effects in transcranial photobiomodulation]. [PDF]

Sheng Wu Yi Xue Gong Cheng Xue Za Zhi
Liu X, Xia J, Pan J, Chen S, Zhang S, Wang M, Dong S.   +6 more
europepmc   +1 more source