Results 201 to 210 of about 4,873 (226)
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Silicene-2DEG heterostructures: Collective excitations investigations
Physica B: Condensed Matter, 2023Van Men Nguyen, Kim Phuong Dong Thi
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SPIN INTERFERENCE IN RASHBA 2DEG SYSTEMS
International Journal of Modern Physics B, 2008The gate controllable SOI provides useful information about spin interference.1 Spin interference effects are studied in two different interference loop structures. It is known that sample specific conductance fluctuations affect the conductance in the interference loop.
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2DEG in strained Si/SiGe heterostructures
Surface Science, 1994Abstract Low-temperature magnetotransport properties for the recent n-type modulation-doped Si/SiGe heterostructures are reported. The biaxially tensile-stressed (100)Si surface layers on stress-relieved SiGe substrates are shown to have all the well known MOSFET characteristics but with more than an order of magnitude higher mobility.
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A Novel GaN-Based Metal-2DEG-Metal Varactor With Cutoff Frequency of 3.13 THz
IEEE Transactions on Electron Devices, 2022Weiguang Wang, Ning An, Jianping Zeng
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Applying 2DEG in High‐Performance Mid‐Infrared Photodetection
Advanced Optical Materials, 2023Hanlun Xu, Mengjuan Liu, Shiyao Zhu
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Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2020Yijun Shi, Wanjun Chen, Ruize Sun
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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2022
Trupti Ranjan Lenka +2 more
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Trupti Ranjan Lenka +2 more
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Active Artificial Synapse Based on 2DEG
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials, 2016P. Stoliar +3 more
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How to extract the surface potential profile from the ARPES signature of a 2DEG
Journal of Electron Spectroscopy and Related Phenomena, 2018S Moser +2 more
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High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures
Journal of Electronic Materials, 2006Z L Xie, Y D Zheng, Chen D J
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