Results 211 to 220 of about 4,873 (226)

Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

Microelectronic Engineering, 2019
C Leroux, Matthew Charles, G Reimbold
exaly  

Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

Solid-State Electronics, 2017
Nadim Ahmed, Aloke K Dutta
exaly  

Quantum confinement effect on 2DEG in InGaN/InN HEMT with an interfacial layer

Physica Status Solidi C: Current Topics in Solid State Physics, 2011
Ashraful G Bhuiyan
exaly  

MBE growth of high-mobility 2DEG

2013
V. Umansky, M. Heiblum
openaire   +1 more source

Photoluminescence studies of 2DEG confinement in InAs ultrathin layer introduced in GaAs/AlGaAs structure

Physica E: Low-Dimensional Systems and Nanostructures, 2010
I Dhifallah, A Bardaoui, N Ben Sedrine
exaly  

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Electronics (Switzerland), 2018
Jian Qin, Quanbin Zhou, Hong Wang
exaly  

Role of Surface States and Interface Charges in 2DEG in Sputtered ZnO Heterostructures

IEEE Transactions on Electron Devices, 2018
Rohit Singh, Md Arif Khan, Shaibal Mukherjee   +2 more
exaly  

Comprehensive Analysis of Bifunctional 2DEG-HBTs

Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials, 1990
T. USAGAWA, P. D. RABINZOHN, H. MIZUTA, K. HIRUMA, M. KAWATA, K. YAMAGUCHI   +5 more
openaire   +1 more source

Non‐Volatile Control of 2DEG Conductivity at Oxide Interfaces

Advanced Materials, 2013
Seon Young Moon, Min-Gyu Kang, Ho Won Jang   +2 more
exaly  

Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology

IEEE Transactions on Electron Devices, 2018
Ina Ostermay, Mani Teja Bodduluri, Joachim Wurfl   +2 more
exaly