Results 81 to 90 of about 218,239 (261)

Stretching the Printability Metric in Direct‐Ink Writing with Highly Extensible Yield‐Stress Fluids

Advanced Functional Materials, EarlyView.
This study introduces “drawability” as a new metric for assessing printability in direct‐ink writing, focusing on gap‐spanning performance and speed robustness. By designing yield‐stress fluids with high extensibility, we demonstrate that extensional strain‐to‐break significantly enhances printability.
Chaimongkol Saengow, Samya Sen, Joaquin Yus, Eliza E. Lovrich, Amanda G. Hoika, Kelly M. Chang, Arielle A. Pfeil, Nellie Haug, Amy J. Wagoner Johnson, Randy H. Ewoldt   +9 more
wiley   +1 more source

Four dimensional-scanning transmission electron microscopy study on relationship between crystallographic orientation and spontaneous polarization in epitaxial BiFeO3

Scientific Reports
Spontaneous polarization and crystallographic orientations within ferroelectric domains are investigated using an epitaxially grown BiFeO3 thin film under bi-axial tensile strain.
In-Tae Bae, Brendan Foran, Hanjong Paik
doaj   +1 more source

Slight Truncation Changes in Iron Oxide Nanocubes Strongly Affect Their Magnetic Properties

Advanced Functional Materials, EarlyView.
Subtle variations in nanoparticle morphology can lead to significant changes in functional properties. An automated shape‐fitting method captures minor differences in corner truncation between iron oxide nanocubes of similar sizes synthesized under identical conditions, revealing pronounced disparities in their magnetic and hyperthermia behavior ...
Kingsley Poon, Raúl López‐Martín, Verner Håkonsen, Nader Yaacoub, Francisco J. Terán, Alberto López Ortega, Jose A. De Toro, Gurvinder Singh   +7 more
wiley   +1 more source

In Situ 4D-STEM [PDF]

Microscopy and Microanalysis, 2020
openaire   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

4D-STEM of Beam-Sensitive Materials

Microscopy and Microanalysis, 2022
Karen C Bustillo, Steven E Zeltmann, Benjamin H Savitzky, Jim Ciston, Rohan Dhall, Peter Ercius, Colin Ophus, Andrew M Minor   +7 more
openaire   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Accuracy, Reproducibility, and Calibration in 4D-STEM

Microscopy and Microanalysis, 2022
Benjamin H Savitzky, Colin Ophus
openaire   +1 more source

Studying clustering in Al alloys by 4D-STEM [PDF]

Microscopy and Microanalysis, 2021
Elisabeth Thronsen, Adrian Lervik, Ding Peng, Calin D. Marioara, Jesper Friis, Sigmund Andersen, Philip Nakashima, Randi Holmestad   +7 more
openaire   +1 more source

Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices

Advanced Functional Materials, EarlyView.
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin, Arthur L. Shilov, Subhajit Jana, Ilya Mazurenko, Pierre A. Pantaleon, Mikhail Kashchenko, Nikita Krivovichev, Viacheslav Dremov, Igor Gayduchenko, Takashi Taniguchi, Kenji Watanabe, Yibo Wang, Kostya S. Novoselov, Dmitry A. Svintsov, Grigory Goltsman, Elena I. Titova, Denis A. Bandurin   +16 more
wiley   +1 more source