Results 221 to 230 of about 139,894 (245)

Electrolyte Design for Fast‐Charging Lithium‐Based Batteries

open access: yesAdvanced Materials, EarlyView.
A decade of progress in fast‐charging electrolytes for lithium batteries is reviewed. Electrolyte design strategies spanning solvents, salts, additives, and advanced systems, such as localized high‐concentration electrolytes (LHCEs), are summarized. Advanced diagnostic tools for lithium plating and interphase chemistry are discussed, with perspectives ...
Chen Liu, Zehao Cui, Arumugam Manthiram
wiley   +1 more source

Active Phase of Nickel Electrocatalysts Driving Alkaline Hydrogen Evolution

open access: yesAdvanced Materials, EarlyView.
Using depth‐resolved and operando spectroscopic measurements coupled with electrochemical mass spectrometry, the authors uncover the critical role of sub‐surface oxidised species in increasing the activity and durability of Ni‐based cathodes for hydrogen evolution.
Yifeng Wang   +17 more
wiley   +1 more source

Prevalence of Anaerobic Bacteria in Surgical Site Infections in a Tertiary Care Hospital. [PDF]

open access: yesCureus
Kedia R   +6 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

open access: yesAdvanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho   +17 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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