Results 241 to 250 of about 7,509 (291)
Unpacking the growth of global agricultural greenhouse gas emissions. [PDF]
Sci AdvOrtiz-Bobea A, Pieralli S.
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On the Active Clamp Gate Driver Thermal Effects
2019 International Conference on Clean Electrical Power (ICCEP), 2019 The IGBT active clamp gate driver is a conveniently method used to protect the switch from the overvoltage by driving the gate input of the IGBT itself. The overvoltage is common during the turn-off of inductive loads or circuits with parasitic elements. This clamping circuit is generally embed into the gate driver circuits. The aim of this paper is to
Luigi Rubino, Guido Rubino
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Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs
IEEE Transactions on Industrial Electronics, 2020Silicon carbide (SiC) MOSFETs are viable alternatives for silicon (Si) insulated-gate bipolar transistors (IGBTs). However, direct retrofitting of SiC MOSFETs in Si IGBT-based converters is not feasible due to the presence of a higher amount of parasitic inductance.
Yash Sukhatme +2 more
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The Active Gate Driver for Switching Loss Reduction of Inverter
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 2020This paper represent the active gate driver to reduce switching loss of inverter systems. The proposed active gate driver is more proper component for high power conversion systems. The passive driving method using a fixed gate resistance has a disadvantage that it can cause a large turnoff surge voltage when it is cut off because it uses the same ...
Joon Sung Park
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An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters
IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, 2021This paper presents an active gate driver with variable gate resistance for use in SiC-driven inverters. Motivated by the negative effects that fast switching transients of SiC MOSFETs may have on the insulation and bearings of electrical machines, the operation theory of the active gate driver and its hardware concept are explained.
Axel Mertens
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An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET
2021 IEEE 4th International Electrical and Energy Conference (CIEEC), 2021Due to the superior material properties, silicon carbide MOSFETs have been widely used in high-speed and high-frequency applications. The current oscillation, overshoot, and EMI problems caused by higher switching speed are more serious. To solve the problems, the mechanism of the current oscillation during the turn-on process was analyzed.
Haifeng Lu, Yongdong Li
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A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI [PDF]
IEEE Transactions on Power Electronics, 2018 Active gate driving has been demonstrated to beneficially shape switching waveforms in Si- and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited ...
Harry C P Dymond +2 more
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An Adaptive Method to Reduce Undershoots and Overshoots in Power Switching Transistors Through a Low-Complexity Active Gate Driver [PDF]
IEEE Transactions on Power Electronics, 2023 Active gate drivers lend themselves well to reducing over- and under- voltages during the commutations of hard switched power transistors, as well as to damping resonances.
Erica Raviola, Franco Fiori
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A novel active gate driver for silicon carbide MOSFET
IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, 2016A novel active gate driver (AGD) for silicon carbide (SiC) MOSFET is studied in this paper. The gate driver (GD) increases the gate resistance value during the voltage plateau area of the gate-source voltage, in both turn-on and turn-off transitions. The proposed AGD is validated in both simulation and experimental environments and in hard-switching ...
Alejandro Paredes Camacho +3 more
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