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An Easily Implementable Gate Charge Controlled Active Gate Driver for SiC MOSFET
IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, 2018SiC MOSFETs have the ability to switch within few tens of nanoseconds (
M. Vamshi Krishna, Kamalesh Hatua
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Active Dual Level Gate Driver for Switching Losses Reduction in IGBTs
2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2019Nowadays, most of the motor driving systems are still using IGBTs as power switches. Moreover, also for this kind of applications, energy saving is of the utmost importance. IGBTs driving solutions are traditionally implemented using a fixed output current for charging and discharging the switch's gate.
Mandelli E. +3 more
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28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005., 2005
Switching power supplies have become the norm in almost all electronic systems. The switchers' excellent line and load regulation, high conversion efficiency, and compactness all contribute to their popularity. Low-loss power MOSFETs and IGBTs (insulated-gate bipolar transistors), coupled with low-drop rectifiers, are at the heart of these switching ...
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Switching power supplies have become the norm in almost all electronic systems. The switchers' excellent line and load regulation, high conversion efficiency, and compactness all contribute to their popularity. Low-loss power MOSFETs and IGBTs (insulated-gate bipolar transistors), coupled with low-drop rectifiers, are at the heart of these switching ...
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Application of Active Gate Driver in Variable Frequency Drives
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018This paper presents the results of an investigation into using a commercially available active gate driver integrated circuit (IC) in variable frequency drive (VFD) applications. The gate driver provides multiple steps of gate current levels to control the gate charge of insulated-gate bipolar transistors (IGBTs) during turn-on transitions to adjust ...
Sam Mahmodicherati +3 more
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A Gate Driver Circuit for Series-Connected IGBTs Based on Quasi-Active Gate Control
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018Growth in high-voltage power-conversion applications in recent years shows the importance and requirement of high-voltage/high-power converters in power electronic applications. The major limitation in this industry is the maximum voltage blocking capability of semiconductor switches.
Alireza Bagheri +2 more
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Current controlled active gate driver for 1200V SiC MOSFET
2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), 20161200V SiC MOSFETs have superior characteristics compared to silicon (Si) IGBTs. However due to parasitic inductances in the converter layout, one to one replacement of Si IGBT with SiC MOSFET may result in higher overshoot in the device voltage and current.
null Vamshi Krishna M, Kamalesh Hatua
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An active gate driver for improving switching performance of SiC MOSFET
2018 7th International Symposium on Next Generation Electronics (ISNE), 2018An active gate driver (AGD) is presented in this work for Silicon Carbide (SiC) devices to fully utilize their potential of high-speed characteristic in higher power density and higher efficiency applications. It can actively adjust the drive voltage during the switching transient of SiC MOSFET and with simple circuit implementation.
Yuan Yang, Yan Wang, Yang Wen
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Active EMI-filter using the gate-drivers power supply
2015 IEEE 11th International Conference on Power Electronics and Drive Systems, 2015All Power Electronic circuits suffer under the presence of Electromagnetic Interference (EMI) which are caused by the rapid switching of the power switches, which are used to modulate an average voltage over a switching period. The common strategy to reduce the effects onto connected circuits or the utility grid is to use EMI filters.
Matthias Biskoping +2 more
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A 49.23% Power Reduction Active Gate Driver with Digital Multi-level Power Gating Control
Journal of Circuits, Systems and ComputersWhen it comes to power systems, both overall performance and efficiency are key factors in the design of the power device drivers. Using multi-level power gating logic, this study developed an active gate driver (AGD) design that is capable of driving the power transistor at different voltage levels. To lessen the amount of power that the AGD consumes,
Chua-Chin Wang +6 more
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An Integrated Active Gate Driver for SiC MOSFETs
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021Dongwoo Han +9 more
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