Results 81 to 90 of about 197,872 (309)

AFM-IR and IR-SNOM for the Characterization of Small Molecule Organic Semiconductors

open access: yes, 2020
Vibrational spectroscopies, such as Raman and Fourier-transform infrared spectroscopy (FT-IR), are powerful tools for the characterization of organic semiconductor thin films and crystals in addition to X-ray diffraction and scanning atomic force ...
Sebastian Hahn (3093066)   +25 more
core   +1 more source

QUAM-AFM Lite

open access: yes, 2021
QUAM–AFM Lite is the scaled-down version of QUAM-AFM, the largest dataset of simulated Atomic Force Microscopy (AFM) images. This reduced version was generated from a selection of 1,755 molecules that span the most relevant bonding structures and ...
Pou, Pablo   +3 more
core   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

High-speed atomic force microscopy: Imaging and force spectroscopy

open access: yes, 2014
International audienceKeywords: High-speed atomic force microscopy High-speed force spectroscopy Membrane protein Membrane structure Titin Actin cortex a b s t r a c t Atomic force microscopy (AFM) is the type of scanning probe microscopy that is ...
Frédéric Eghiaian   +9 more
core   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

open access: yesAdvanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero   +12 more
wiley   +1 more source

Stratégies des marques face à leur appropriation par un artiste : Analyse réalisée à partir d’œuvres appartenant au mouvement du pop art et à ses héritiers

open access: yesK@iros
This research focuses on the rapprochement between commercial world of brands and that of art, two worlds that are a priori distinct. Indeed, essentially since the 20th century, the artistic sphere tends to be more and more intertwined with brands that ...
Laurence GRAILLOT
doaj   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

Measurement and Control of the Charge Occupation of Single Adsorbed Molecules Levels by STM and Nc-AFM

open access: yes, 2019
Single hexa-peri-hexabenzocoronene molecules adsorbed on KBr films, 2–8 monolayers (ML) thick, deposited on Ag(111) have been characterized by scanning tunneling microscopy coupled with noncontact atomic force microscopy (nc-AFM) in ultrahigh vacuum and ...
Olivier Guillermet (2069878)   +3 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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