Results 181 to 190 of about 36,563 (205)
Some of the next articles are maybe not open access.
Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining
IEEE Transactions on Electron Devices, 1994An AlGaAs/GaAs micromachining technique that is compatible with laser diode fabrication process is described. AlGaAs structural layers and GaAs sacrificial layers are prepared by metal organic vapor phase epitaxy. Reactive dry etching with chlorine is used to fabricate high-aspect structures.
Y. Uenishi, H. Tanaka, H. Ukita
openaire +1 more source
AlGaAs/GaAs/AlGaAs DHBT's for high-temperature stable circuits
IEEE Electron Device Letters, 1994High-temperature devices are required for a large number of industrial applications. In order to demonstrate the feasibility of a high temperature operating circuit on GaAs an operational amplifier was designed and fabricated. A corresponding technology for transistors and circuits for operation up to 300/spl deg/C with AlGaAs/GaAs/AlGaAs DHBT's is ...
K. Fricke +3 more
openaire +1 more source
Journal of Applied Physics, 1997
Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray
Wasilewski, Z. R. +5 more
openaire +2 more sources
Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray
Wasilewski, Z. R. +5 more
openaire +2 more sources
AlGaAs superlattice microcoolers
Applied Physics Letters, 2003AlGaAs-based superlattice microcoolers are demonstrated. Maximum cooling temperatures of 0.8 °C and 2 °C were obtained at 25 °C and 100 °C, respectively, from 60 μm×60 μm devices with 100 period Al0.10Ga0.90As/Al0.20Ga0.80As n-type superlattice thermal barriers.
Zhang, JH, Anderson, NG, Lau, KM
openaire +2 more sources
MBE Regrowth of AlGaAs on Ion Etched GaAs/AlGaAs Microstructures
MRS Proceedings, 1988ABSTRACTThe combination of an ion beam assisted etching (IBAE) system and a Molecular Beam Epitaxy (MBE) growth chamber integrally connected in the same set of ultrahigh vacuum (UHV) chambers has allowed us to etch patterns defined by a strontium fluoride mask down into the underlying semiconductor wafer, and regrow monocrystalline material around ...
J. P. Harbison +4 more
openaire +1 more source
Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells
Semiconductor Science and Technology, 1992The authors measured photoluminescence (PL) spectra under an applied electric field along the hetero-interface to study hot electron scattering mechanisms in HEMTs. The electron temperature obtained from the PL spectra, indicates hot electron scattering conditions. An undoped AlGaAs barrier layer is inserted into the HEMT's channel layer.
K Makiyama, K Kasai, T Ohori, J Komeno
openaire +1 more source
Journal of Lightwave Technology, 1987
The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.
openaire +1 more source
The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.
openaire +1 more source
Manganese luminescence in AlGaAs-alloys and AlGaAs/GaAs quantum wells
Solid State Communications, 1987Abstract Our low-temperature photoluminescence studies of Mn-doped AlxGa1−xAs-alloys reveal a linear shift of the Mn-acceptor level with increasing Al-content x. Using the Mn-acceptor as a reference level, we determine a valence-band offset between GaAs and AlAs of ΔEv=0.33eV.
F. Bantien, J. Weber
openaire +1 more source
Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach
European Transactions on Telecommunications, 1990AbstractA study of pseudomorphic layers properties using a selfconsistent approach is presented. The strain effects are taken into account. Sheet carrier density and capacitance voltage characteristics are related to technological layer parameters. Simple expressions of subband energy well suited for CAD are then deduced.
Jocelyn Alamkan +3 more
openaire +1 more source
Impact ionisation in the AlGaAs layer of GaAs/AlGaAs heterojunctions
Superlattices and Microstructures, 1993Abstract In various experiments the existence of current instabilities in GaAs/AlGaAs heterojunctions has been demonstrated. Among these are avalanche-like phenomena. In a tentative explanation these are attributed to the ionisation of deep donors in the AlGaAs layer.
P.J. van Hall, E.A.E. Zwaal
openaire +1 more source