Results 191 to 200 of about 36,563 (205)
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2021
A principally new collective state???magnetofermionic condensate???was found upon excitation of long-lived triplet cyclotron magnetoexcitons in a Hall insulator with high electron mobility and filling factor ?? = 2 at low temperatures T < 1???K.
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A principally new collective state???magnetofermionic condensate???was found upon excitation of long-lived triplet cyclotron magnetoexcitons in a Hall insulator with high electron mobility and filling factor ?? = 2 at low temperatures T < 1???K.
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Journal of Applied Physics, 1979
An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high- and low-band gap cells of a cascade solar-cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.
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An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high- and low-band gap cells of a cascade solar-cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.
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Submicron-square emitter AlGaAs/GaAs HBTs with AlGaAs hetero-guardring
IEEE Electron Device Letters, 1994Successful operation of submicron-square emitter AlGaAs/GaAs HBTs is demonstrated for the first time by using a fully mesa-structure-type emitter-base junction-area definition method with an AlGaAs hetero-guardring. The hetero-guardring reduces surface recombination current at the emitter-mesa edge to 1.4 /spl mu/A//spl mu/m.
Y. Ueda, N. Hayama, K. Honjo
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Resonant-cavity-enhanced thin-film AlGaAs/GaAs/AlGaAs LED’s with metal mirrors
Applied Optics, 1995Resonant-cavity-enhanced light-emitting diodes (RCE LED's) are of increasing interest as a low-cost alternative to lasers for short-distance applications. We report on the characteristics of thin-film AlGaAs/GaAs/AlGaAs double-heterostructure RCE LED's with metal mirrors on both sides fabricated by means of epitaxial liftoff and bonded to silicon host ...
S T, Wilkinson +2 more
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Zn diffusion mechanism in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures
Journal of Crystal Growth, 1994Abstract Zn diffusion has been investigated in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures during growth of n-GaAs layers. Se and Si are used as dopants for the n-GaAs layer. Zn diffusion in these structures depends strongly on the kind of dopant as well as on the carrier concentration in the n-GaAs layer.
N. Fujii +5 more
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2018
???????????????????? ?????????????????? ???????????????????? ?????????????????????? ?????????????? ?? ?????????????????????????????? AIGaAs-GaAs-AIGaAs ?? ?????????????????????????? ???????????????? ????????????, ???????????????????????????? ?? ???????? GaAs. ?????? ?????????? ?? ?????????????????? ????????????????, ?????????????????????? ???????????? ?
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???????????????????? ?????????????????? ???????????????????? ?????????????????????? ?????????????? ?? ?????????????????????????????? AIGaAs-GaAs-AIGaAs ?? ?????????????????????????? ???????????????? ????????????, ???????????????????????????? ?? ???????? GaAs. ?????? ?????????? ?? ?????????????????? ????????????????, ?????????????????????? ???????????? ?
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2016
The article analyzes the process of formation of a static domain and avalanche multiplication of current in it on the basis of the two-temperature model variband Al-GaAs.
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The article analyzes the process of formation of a static domain and avalanche multiplication of current in it on the basis of the two-temperature model variband Al-GaAs.
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2017
Optical data on GaAs/AlGaAs quantum well structures with positively charged acceptors (A??? centers) are presented. The magneto-optical measurements have provided information on spin structure and localization in the 2D system of A??? centers. The temperature properties of photoluminescence were used to study the energy structure of the A??? band.
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Optical data on GaAs/AlGaAs quantum well structures with positively charged acceptors (A??? centers) are presented. The magneto-optical measurements have provided information on spin structure and localization in the 2D system of A??? centers. The temperature properties of photoluminescence were used to study the energy structure of the A??? band.
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2018
Experiments relating to studies of the coherence of Bose condensates of dipolar excitons in GaAs/AlGaAs heterostructures with a wide, single quantum well and a Schottky gate are analyzed. Dipolar excitons were excited by light in an annular trap formed along the perimeter of a window in a metal gate with an applied electric voltage.
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Experiments relating to studies of the coherence of Bose condensates of dipolar excitons in GaAs/AlGaAs heterostructures with a wide, single quantum well and a Schottky gate are analyzed. Dipolar excitons were excited by light in an annular trap formed along the perimeter of a window in a metal gate with an applied electric voltage.
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2014
The technological features of reception multi-layers heterostructures in systems GaAs-InGaAs-AlGaAs with three ?????n by transitions, method LPE are considered. Heterostructures are intended for manufacturing highly effective photoconverters of a solar energy of space basing. Feature heterostructures are the presence in their structure avalanche of the
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The technological features of reception multi-layers heterostructures in systems GaAs-InGaAs-AlGaAs with three ?????n by transitions, method LPE are considered. Heterostructures are intended for manufacturing highly effective photoconverters of a solar energy of space basing. Feature heterostructures are the presence in their structure avalanche of the
+6 more sources