Results 131 to 140 of about 166,038 (326)
AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices.
J Patouillard +14 more
doaj +1 more source
Effect of oxygen content on bending strength and thermal conductivity of aluminum nitride ceramics
AlN ceramic powders with the different oxygen contents were prepared by the carbon-thermal reduction method through controlling the carbon removal process, using Al2O3 powders and carbon black as raw materials.
PU Enxiang +7 more
doaj +1 more source
Pressureless Sintered Nitride Composites in the AlN-Al2O3System [PDF]
Young Woo Kim +4 more
openalex +1 more source
Multi‐Dimensional Conductive Nanocomposites for Flexible Electronics
Multi‐dimensional conductive nanocomposites integrate 0D, 1D, and 2D nanomaterials through spatial structure regulation and interface engineering, achieving “1 + 1 > 2” synergistic effects. By leveraging 0D filling to reduce contact resistance, 1D bridging to construct continuous conductive paths, and 2D supporting to enhance mechanical stability ...
Tianyu Wang +12 more
wiley +1 more source
Metal Atoms Adsorbed on AlN Monolayer: Potential Application in Photodetectors
Two-dimensional materials have broad application prospects in the field of optoelectronic devices. As a next-generation power electronic device, AlN materials have obvious advantages in power processing, and their monolayer structure has excellent ...
Zhao Shao, Fengjiao Cheng
doaj +1 more source
Dual Operating Mode Imaging Photodetector Based on Electrical Modulation of p‐Si/MgO/ZnO
This research innovatively introduces the MgO barrier layer and utilizes the device structure advantages of MSM to achieve breakthrough dual‐band response output of p‐Si/MgO/ZnO photodetectors under bias modulation. It has been successfully applied in dual‐mode imaging, laying the foundation for the development of third‐generation imaging technology ...
Hepeng Zhao +4 more
wiley +1 more source
Aluminium nitride (AlN) sputter-deposited directly on a bare silicon (Si) substrate suffers from significant lattice mismatch due to the presence of an amorphous interfacial layer at the AlN–Si interface and a considerable difference in in-plane lattice ...
Syazwani Izrah Badrudin +5 more
doaj +1 more source
ПЭМ-исследование многослойных буферных структур AlN-AlGaN-GaN на кремниевых подложках
А.В. Мясоедов +5 more
openalex +2 more sources
Research progress on the depth of anesthesia monitoring based on the electroencephalogram
Electroencephalogram (EEG) can noninvasive, continuous, and real‐time monitor the state of brain electrical activity, and the monitoring of EEG can reflect changes in the depth of anesthesia (DOA). The development of artificial intelligence can enable anesthesiologists to extract, analyze, and quantify DOA from complex EEG data.
Xiaolan He, Tingting Li, Xiao Wang
wiley +1 more source
A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition [PDF]
Tai Nguyen +6 more
openalex +1 more source

