Results 231 to 240 of about 38,954 (267)

AlN/AlGaN/AlN quantum well channel HEMTs

Applied Physics Letters, 2023
We present a compositional dependence study of electrical characteristics of AlxGa1−xN quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with x=0.25,0.44, and 0.58. This ultra-wide bandgap heterostructure is a candidate for next-generation radio frequency and power electronics. The use of selectively regrown n-type GaN
Jashan Singhal, Eungkyun Kim, Austin Hickman, Reet Chaudhuri, Yongjin Cho, Huili Grace Xing, Debdeep Jena   +6 more
openaire   +1 more source

AlN/Fe/AlN nanostructures for magnetooptic magnetometry

Journal of Applied Physics, 2014
AlN/Fe/AlN/Cu nanostructures with ultrathin Fe grown by sputtering on Si substrates are evaluated as probes for magnetooptical (MO) mapping of weak currents. They are considered for a laser wavelength of λ = 410 nm (3.02 eV) and operate at oblique light incidence angles, φ(0), to enable detection of both in-plane and out-of-plane magnetization.
E. Lišková-Jakubisová, Š. Višňovský, P. Široký, D. Hrabovský, J. Pištora, I. Harward, Z. Celinski   +6 more
openaire   +1 more source

Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

Japanese Journal of Applied Physics, 1996
Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks.
Yasuo Ohba Yasuo Ohba, Ako Hatano Ako Hatano   +1 more
openaire   +1 more source

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2019
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openaire   +4 more sources

AlN based piezoelectric micromirror

Optics Letters, 2018
Aiming to pursue a micromirror possessing many desired characteristics, such as linear control, low power consumption, fast response, and easy fabrication, a new piezoelectric actuation strategy is presented. Different from conventional piezoelectric actuation cases, we first propose using AlN film as the active layer for actuating the micromirror ...
Jian Shao, Qi Li, Chuhuan Feng, Wei Li, Hongbin Yu   +4 more
openaire   +2 more sources

Single-crystal AlN nanonecklaces

Nanotechnology, 2008
Distinct single-crystal aluminum nitride nanonecklaces with uniform [1011] faceted beads are synthesized via catalyst-assisted nitriding of Al. The detailed morphology and structure of the nanonecklaces have been characterized. The growth process has been investigated by comparing the products obtained at different synthesis times.
Huatao, Wang, Zhipeng, Xie, Yiguang, Wang, Weiyou, Yang, Qingfeng, Zeng, Feng, Xing, Linan, An   +6 more
openaire   +3 more sources

Electronic structure of AlN

Physical Review B, 1986
The self-consistent electronic structure of AlN has been calculated using a first-principles linear-combination-of-atomic-orbitals method. Theoretical values for the lattice constant, internal parameter, bulk modulus, and cohesive energy were determined as well as the pressure-dependent frequency of the A/sub 1/ TO phonon.
, Ching, , Harmon
openaire   +2 more sources

Creep of Al2O3-AlN and Y2O3-AlN ceramics

Soviet Powder Metallurgy and Metal Ceramics, 1976
An investigation into the creep of Al2O3-AlN and Y2O3-AlN ceramics has demostrated that the addition of 20–80% AlN reduces the creep rate of Al2O3. In the system Y2O3-AlN the existence of a creep rate maximum has been discovered, which may be a manifestation of structural superplasticity.
I. I. Spivak, V. N. Rystsov, V. D. Lazarenko   +2 more
openaire   +1 more source

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2015
( ), , CNRS (Centre National de la Researche Scientifique, )
openaire   +1 more source