Results 261 to 270 of about 41,670 (314)

Electronic structure of AlN

Physical Review B, 1986
The self-consistent electronic structure of AlN has been calculated using a first-principles linear-combination-of-atomic-orbitals method. Theoretical values for the lattice constant, internal parameter, bulk modulus, and cohesive energy were determined as well as the pressure-dependent frequency of the A/sub 1/ TO phonon.
, Ching, , Harmon
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Creep of Al2O3-AlN and Y2O3-AlN ceramics

Soviet Powder Metallurgy and Metal Ceramics, 1976
An investigation into the creep of Al2O3-AlN and Y2O3-AlN ceramics has demostrated that the addition of 20–80% AlN reduces the creep rate of Al2O3. In the system Y2O3-AlN the existence of a creep rate maximum has been discovered, which may be a manifestation of structural superplasticity.
I. I. Spivak, V. N. Rystsov, V. D. Lazarenko   +2 more
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Stabilization criteria for cubic AlN in TiN/AlN and CrN/AlN bi-layer systems

Journal of Physics D: Applied Physics, 2012
We combine the finite element (ABAQUS) and ab initio methods to study and predict the equilibrium critical thickness up to which the metastable cubic (c) AlN phase is energetically favoured to the stable wurtzite (w) variant in TiN/AlN and CrN/AlN bi-layer systems.
Vipin Chawla, David Holec, Paul H Mayrhofer   +2 more
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2019
???????????????? ???????????????????? ?????????????????????? ?????????????????? ?????????????????????????????? ???????????????????????????? ?? ??????????????: ?????????????????????????? ???????????????????? ???? ???????????? ???????????????????????? ???????????? ?????? 5/3 (1) ???? ???????????????????? (2), ???????????????????????????? ?????????????????
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Growth of AlGaN and AlN on patterned AlN/sapphire templates

Journal of Crystal Growth, 2011
Abstract Maskless epitaxial overgrowth of AlGaN on structured AlN templates was performed and the impact of stripe orientation on the lateral growth of AlGaN was studied. AlN/sapphire templates were patterned into stripes with 1.5 μ m wide bars and a period of 3 μ m . AlGaN and AlN growths were performed on the patterned templates.
V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, M. Weyers   +6 more
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Band Offsets In GaN/AlN and AlN/SiC Heterojunctions

MRS Proceedings, 1997
AbstractWe have investigated the structural trends of the band offsets in GaN/AlN and AlN/SiC heterojunctions using the ab initio pseudopotential method. In the zincblende GaN/AlN (100), (110), and (111) heterojunctions, the band offsets are relatively insensitive to interface orientation.
Nadia Binggeli, Philippe Ferrara, Alfonso Baldereschi   +2 more
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Thermal Transport at the AlN–SiC Interface and Grain Boundary of AlN

ACS Applied Materials & Interfaces
AlN is deposited on silicon carbide (SiC) for high-power electronics; in these devices, AlN acts as both a buffer layer for the growth of the active device and a thermal conductor. However, the mechanism of thermal transport through the AlN-SiC interfaces and through grain boundaries of AlN has not been clearly analyzed, even though AlN forms grain ...
Taesoon Hwang, Ping-Che Lee, Andrew C. Kummel, Kyeongjae Cho   +3 more
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Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices

Physical Review Letters, 1997
The high-pressure rocksalt structure of AlN was stabilized in epitaxial AlN/TiN(001) superlattices with AlN layer thickness $\ensuremath{\le}2.0\mathrm{nm}$. The AlN layers were shown to be pure rocksalt-structure AlN, with a stress-free lattice parameter of $0.408\ifmmode\pm\else\textpm\fi{}0.002\mathrm{nm}$, using x-ray diffraction, transmission ...
A. Madan, I. W. Kim, S. C. Cheng, P. Yashar, V. P. Dravid, S. A. Barnett   +5 more
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????????????-???????????????? ?????????????????????? ???????????????? ???? ???????????????????? ?? ???????????????????? ???????????????? ???? ???????????? ?????????????????????? AlN

2014
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Archaeological Evaluation at Alne Brickworks, Alne, North Yorkshire

2015
A programme of archaeological evaluation undertaken over an area of proposed clay extraction to the south the existing Alne brickworks on Forest Lane, Alne, near Easingwold, North Yorkshire. The evaluation comprised five trenches each measuring 50m by 2m, positioned to examine a range of anomalies recorded in a geophysical survey.
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