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HemaSphere, Volume 10, Issue S1, June 2026.
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MRCI studies on the electronic structure of AlN and AlN−, and the electron affinity of AlN

Journal of Molecular Spectroscopy, 2003
Abstract Using multireference configuration-interaction methods and double to triple-zeta basis sets with semidiffuse and polarization functions, potential energies and spectroscopic constants for low-lying doublet, and quartet states of AlN − were calculated. X 2 Σ + has R e =3.280 bohr and ω e =870 cm −1 . 1
Christopher M. Clouthier, Friedrich Grein, Pablo J. Bruna   +2 more
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AlN/AlGaN/AlN quantum well channel HEMTs

Applied Physics Letters, 2023
We present a compositional dependence study of electrical characteristics of AlxGa1−xN quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with x=0.25,0.44, and 0.58. This ultra-wide bandgap heterostructure is a candidate for next-generation radio frequency and power electronics. The use of selectively regrown n-type GaN
Jashan Singhal, Eungkyun Kim, Austin Hickman, Reet Chaudhuri, Yongjin Cho, Huili Grace Xing, Debdeep Jena   +6 more
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Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

Japanese Journal of Applied Physics, 1996
Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks.
Yasuo Ohba Yasuo Ohba, Ako Hatano Ako Hatano   +1 more
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Interfacial properties of AlN and oxidized AlN on Si

Surface Science, 2010
Abstract We report on the characteristics of metal–insulator-semiconductor (MIS) capacitors with aluminum nitride (AlN) as the insulator material. AlN has been grown on (1 1 1) Si by means of molecular beam epitaxy (MBE) and DC magnetron sputtering (SPU). AlN layers have been characterized before and after dry thermal oxidation in O 2 .
M. Placidi, A. Pérez-Tomás, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi, J. Millán   +9 more
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AlN/Fe/AlN nanostructures for magnetooptic magnetometry

Journal of Applied Physics, 2014
AlN/Fe/AlN/Cu nanostructures with ultrathin Fe grown by sputtering on Si substrates are evaluated as probes for magnetooptical (MO) mapping of weak currents. They are considered for a laser wavelength of λ = 410 nm (3.02 eV) and operate at oblique light incidence angles, φ(0), to enable detection of both in-plane and out-of-plane magnetization.
E. Lišková-Jakubisová, Š. Višňovský, P. Široký, D. Hrabovský, J. Pištora, I. Harward, Z. Celinski   +6 more
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