Results 221 to 230 of about 166,038 (326)
Summary Triticum turgidum cv Kronos is a tetraploid wheat cultivar that underpins one of the most widely used community platforms for functional genomics. Over the past decade, researchers have generated c. 3000 exome‐capture (EC) and promoter‐capture (PC) datasets linked to mutagenized seed stocks, along with extensive transcriptomic and phenotypic ...
Kyungyong Seong +9 more
wiley +1 more source
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer [PDF]
Qingkai Qian +7 more
openalex +1 more source
Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley +1 more source
Trimethylamine N-oxide as a potential biomarker for predicting axillary lymph node metastasis in breast cancer: a retrospective study. [PDF]
Wu Z +7 more
europepmc +1 more source
Dependence of oxygen impurity concentration in AlN on the surface roughness during growth [PDF]
Yuheng Zhang +8 more
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Conventional Ga‐polar aluminum gallium nitride (AlGaN) deep‐ultraviolet (UV) light‐emitting diodes (LEDs) suffer from polarization‐induced carrier separation and severe electron leakage, which limit device efficiency. In this regard, we present an N‐polar AlGaN‐based UV LED integrating a band‐engineered active region designed to overcome the ...
Swetha Velpula +3 more
wiley +1 more source
Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]
Brunetta S +6 more
europepmc +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source

