Results 221 to 230 of about 166,038 (326)

The annotated blueprint: integrated functional genomic resources for a model tetraploid wheat Triticum turgidum cv Kronos

open access: yesNew Phytologist, Volume 250, Issue 3, Page 1389-1410, May 2026.
Summary Triticum turgidum cv Kronos is a tetraploid wheat cultivar that underpins one of the most widely used community platforms for functional genomics. Over the past decade, researchers have generated c. 3000 exome‐capture (EC) and promoter‐capture (PC) datasets linked to mutagenized seed stocks, along with extensive transcriptomic and phenotypic ...
Kyungyong Seong   +9 more
wiley   +1 more source

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer [PDF]

open access: gold, 2016
Qingkai Qian   +7 more
openalex   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

open access: yesAdvanced Engineering Materials, Volume 28, Issue 8, 22 April 2026.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

Dependence of oxygen impurity concentration in AlN on the surface roughness during growth [PDF]

open access: hybrid
Yuheng Zhang   +8 more
openalex   +1 more source

Polarization‐Engineered Barrier Designs and Field Reversal Strategies for Improved Carrier Confinement in N‐Polar Thin‐Film Aluminum Gallium Nitride Deep‐Ultraviolet Light‐Emitting Diodes

open access: yesphysica status solidi (a), Volume 223, Issue 7, 7 April 2026.
Conventional Ga‐polar aluminum gallium nitride (AlGaN) deep‐ultraviolet (UV) light‐emitting diodes (LEDs) suffer from polarization‐induced carrier separation and severe electron leakage, which limit device efficiency. In this regard, we present an N‐polar AlGaN‐based UV LED integrating a band‐engineered active region designed to overcome the ...
Swetha Velpula   +3 more
wiley   +1 more source

Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]

open access: yesACS Photonics
Brunetta S   +6 more
europepmc   +1 more source

Enhanced breakdown strength of Na0.5Bi0.5TiO3-BaTiO3/AlN composites for effective energy storage and electrocaloric performance

open access: green
J Pramod   +8 more
openalex   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

open access: yesphysica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu   +2 more
wiley   +1 more source

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