Results 241 to 250 of about 38,954 (267)

Stabilization criteria for cubic AlN in TiN/AlN and CrN/AlN bi-layer systems

Journal of Physics D: Applied Physics, 2012
We combine the finite element (ABAQUS) and ab initio methods to study and predict the equilibrium critical thickness up to which the metastable cubic (c) AlN phase is energetically favoured to the stable wurtzite (w) variant in TiN/AlN and CrN/AlN bi-layer systems.
Vipin Chawla, David Holec, Paul H Mayrhofer   +2 more
openaire   +1 more source

Permittivity modulation study of multiferroic AlN/NiFe/AlN films

physica status solidi c, 2007
AbstractThis paper reports the dielectric properties of AlN/NiFe/AlN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz.
D. S. Hung, Y. D. Yao, K. T. Wu, J. C. Hsu, Y. C. Chen, Y. Ding   +5 more
openaire   +1 more source

Band Offsets In GaN/AlN and AlN/SiC Heterojunctions

MRS Proceedings, 1997
AbstractWe have investigated the structural trends of the band offsets in GaN/AlN and AlN/SiC heterojunctions using the ab initio pseudopotential method. In the zincblende GaN/AlN (100), (110), and (111) heterojunctions, the band offsets are relatively insensitive to interface orientation.
Nadia Binggeli, Philippe Ferrara, Alfonso Baldereschi   +2 more
openaire   +1 more source

Interfacial properties of AlN and oxidized AlN on Si

Surface Science, 2010
Abstract We report on the characteristics of metal–insulator-semiconductor (MIS) capacitors with aluminum nitride (AlN) as the insulator material. AlN has been grown on (1 1 1) Si by means of molecular beam epitaxy (MBE) and DC magnetron sputtering (SPU). AlN layers have been characterized before and after dry thermal oxidation in O 2 .
M. Placidi, A. Pérez-Tomás, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi, J. Millán   +9 more
openaire   +1 more source

Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices

Physical Review Letters, 1997
The high-pressure rocksalt structure of AlN was stabilized in epitaxial AlN/TiN(001) superlattices with AlN layer thickness $\ensuremath{\le}2.0\mathrm{nm}$. The AlN layers were shown to be pure rocksalt-structure AlN, with a stress-free lattice parameter of $0.408\ifmmode\pm\else\textpm\fi{}0.002\mathrm{nm}$, using x-ray diffraction, transmission ...
A. Madan, I. W. Kim, S. C. Cheng, P. Yashar, V. P. Dravid, S. A. Barnett   +5 more
openaire   +1 more source

Permittivity study of multiferroic AlN∕NiFe∕AlN multilayer films

Journal of Applied Physics, 2008
NiFe inserted layer with different thicknesses on the dielectric properties of multiferroic AlN∕NiFe∕AlN multilayer films fabricated on the B270 glass substrates by the reactive sputtering technique was studied. The variation of dielectric constant for multilayer films is dependent on the thickness of the NiFe inserted layer observed from 40Hzto30MHz ...
D. S. Hung, Y. D. Yao, D. H. Wei, K. T. Wu, J. C. Hsu, T. Ding, Y. C. Chen   +6 more
openaire   +1 more source

Análisis elipsométrico de nanoestructuras híbridas Semiconductor/Metal: Co/AlN/AL2O3 y AlN/Co/AlN/AL2O3

2017
Presentamos un estudio sobre las propiedades ópticas de nanoestructuras híbridas Co(10nm)/AlN(5nm) y AlN(10 nm)/Co(10 nm)/AlN(5 nm), crecidas mediante magnetrón evaporación catódica RF asistida por magnetrones, sobre sustratos de α-Al2O3(0001). La técnica de Espectroscopia Elipsométrica es empleada para obtener los parámetros elipsométricos (∆,Ψ), y a ...
Fermin, José R., Rincón, Dario, Marín, Giovanni, Chesman Feitosa, Carlos   +3 more
openaire   +1 more source

????????????-???????????????? ?????????????????????? ???????????????? ???? ???????????????????? ?? ???????????????????? ???????????????? ???? ???????????? ?????????????????????? AlN

2014
???????????????????????? ?????????????????????????? ???? ???????????? ?????????????????????? ?????????????? ???????????????? ???????????????????????? ??????????????????, ???????????????????? ???????????????? ???????????????????? ???????????????? ?? ???????????????? ??????????????????????. ?????????????????? ?????????? ?????????????? ???????????? ???????
openaire   +3 more sources

MRCI studies on the electronic structure of AlN and AlN−, and the electron affinity of AlN

Journal of Molecular Spectroscopy, 2003
Abstract Using multireference configuration-interaction methods and double to triple-zeta basis sets with semidiffuse and polarization functions, potential energies and spectroscopic constants for low-lying doublet, and quartet states of AlN − were calculated. X 2 Σ + has R e =3.280 bohr and ω e =870 cm −1 . 1
Christopher M. Clouthier, Friedrich Grein, Pablo J. Bruna   +2 more
openaire   +1 more source

???????????????????????????? ???????????????????? ?????????????????? ???????????????????? ???????????????????? ???? ???????????? AlN???SiC

2017
?????????????? ???????????????????? ???????????????? ???????????????? ???????????????????????????? ?????????????????? ???? ???????????? AlN???SiC. ????????????????, ?????? ?????? ???????????????????????? ?????????????????? AlN???SiC???Y???Al???O?????? ??????????-?????????????????? ???????????? ?????????????????????? ???? ???????????????? ?????????? SiC
openaire   +2 more sources