Results 21 to 30 of about 38,954 (267)

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

APL Materials, 2022
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has garnered much attention recently as a promising channel material for next-generation high electron mobility transistors (HEMTs). A comprehensive experimental study of the effects of Al composition x on the transport and structural properties is lacking.
Jashan Singhal, Reet Chaudhuri, Austin Hickman, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena   +5 more
openaire   +2 more sources

Effect of Cooling Rate on AlN Precipitation in FeCrAl Stainless Steel During Solidification

Metals, 2019
The effect of cooling rate on the evolution of AlN inclusions precipitated during solidification in FeCrAl stainless steel was investigated using an experimental study and thermodynamic and kinetic calculations.
Zhenqiang Deng, Yang He, Jianhua Liu, Baijun Yan, Yindong Yang, Alexander McLean   +5 more
doaj   +1 more source

Local Electronic Structure in AlN Studied by Single-Crystal ²⁷Al and ¹⁴N NMR and DFT Calculations

Molecules, 2020
Both the chemical shift and quadrupole coupling tensors for 14 N and 27 Al in the wurtzite structure of aluminum nitride have been determined to high precision by single-crystal NMR spectroscopy. A homoepitaxially grown AlN single crystal
Otto E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas Bräuniger   +4 more
doaj   +1 more source

Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN

Российский технологический журнал, 2020
Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc.
V. S. Feshchenko, K. N. Zyablyuk, E. A. Senokosov, V. I. Chukita, D. A. Kiselev   +4 more
doaj   +1 more source

Investigation of the site-specific binding interactions and sensitivity of ochratoxin with aluminum nitride (Al12N12) nanoclusters. An intuition from Quantum Chemical Calculations

Chemical Physics Impact, 2023
Density functional theory (DFT) computing was used in this study to examine the feasibility for detecting the interaction of nitrogen (Ochra@AlN...N), oxygen (Ochra@AlN...O), and chlorine (Ochra@AlN...Cl) with the surface of an aluminum nitride (Al12N12)
Ernest C. Agwamba, Hitler Louis, Innocent Benjamin, Ernest E. Ekereke, Gideon E. Mathias, Eze F. Ahuekwe, Adedapo S. Adeyinka   +6 more
doaj   +1 more source

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure [PDF]

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020
Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work we present the fabrication and DC / high voltage characterizations of AlN/AlGaN/AlN double heterostructure that are regrown by ...
Abid, Idriss, Kabouche, Riad, Medjdoub, F, Besendörfer, Sven, Meissner, Elke, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Miyake, Hideto   +8 more
openaire   +2 more sources

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Nanomaterials, 2019
High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-
Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, Shengjun Zhou   +5 more
doaj   +1 more source

CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Crystals, 2022
(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated.
Marc Portail, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, Remi Comyn, Luan Nguyen, Yvon Cordier, Philippe Vennéguès   +10 more
doaj   +1 more source

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Crystals, 2023
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The
Sanjie Liu, Yangfeng Li, Jiayou Tao, Ruifan Tang, Xinhe Zheng   +4 more
doaj   +1 more source

AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications [PDF]

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2016
Recent studies have evidenced that Pt/AlN/Sapphire surface acoustic wave (SAW) devices are promising for high-temperature high-frequency applications. However, they cannot be used above 700°C in air atmosphere as the Pt interdigital transducers (IDTs) agglomerate and the AlN layer oxidizes in such conditions.
Legrani, Ouarda, Aubert, Thierry, Elmazria, Omar, Bartasyte, Ausrine, Nicolay, Pascal, Talbi, Abdelkrim, Boulet, Pascal, Ghanbaja, Jaafar, Mangin, Denis   +8 more
openaire   +2 more sources