Results 251 to 260 of about 55,413 (296)
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Journal of the American Ceramic Society, 1991
The composition and microstructure of dispersed‐phase ceramic composites containing BN and AIN as well as BN and AIN single‐phase ceramics prepared by chemical vapor deposition have been characterized using X‐ray diffraction, scanning electron microscopy, electron microprobe, and transmission electron microscopy techniques.
John A. Hanigofsky +4 more
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The composition and microstructure of dispersed‐phase ceramic composites containing BN and AIN as well as BN and AIN single‐phase ceramics prepared by chemical vapor deposition have been characterized using X‐ray diffraction, scanning electron microscopy, electron microprobe, and transmission electron microscopy techniques.
John A. Hanigofsky +4 more
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Journal of the American Ceramic Society, 2004
AlN–AlN polytypoid composite materials were prepared in situ using pressureless sintering of AlN–Al 2 O 3 mixtures (3.7–16.6 mol% Al 2 O 3
Inger‐Lise Tangen +4 more
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AlN–AlN polytypoid composite materials were prepared in situ using pressureless sintering of AlN–Al 2 O 3 mixtures (3.7–16.6 mol% Al 2 O 3
Inger‐Lise Tangen +4 more
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Journal of the American Ceramic Society, 2002
Aluminum nitride–boron nitride (AlN–BN) composites were prepared based on the nitridation of aluminum boride (AlB 2 ). AlN powder was added to change the BN volume fraction in the obtained composites.
Guo‐Jun Zhang +3 more
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Aluminum nitride–boron nitride (AlN–BN) composites were prepared based on the nitridation of aluminum boride (AlB 2 ). AlN powder was added to change the BN volume fraction in the obtained composites.
Guo‐Jun Zhang +3 more
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Photorefractive effect in undoped aluminum nitride
Optics Letters, 2010We report our observation of the photorefractive effect in undoped aluminum nitride. We measured the coupling constant and the formation rate as a function of pump intensity at a wavelength of 405 nm in a two-wave mixing experiment. The photorefractive gain coefficient was 0.47 cm(-1) at I = 6.9 W/cm(2), and the actual saturated value was probably ...
Toru Nagai +3 more
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Ceramics International, 2005
Abstract Fine-grained AlN–AlN polytypoid composites doped with SiO 2 were prepared in situ by pressureless sintering of AlN–Al 2 O 3 mixtures (3.7 and 10.5 mol% Al 2 O 3 ) at 1870 °C using Y 2 O 3 as sintering aid. SiO 2 -doping (1 wt.%) was used to stabilize the AlN polytypoids and reduce the average grain size of the polytypoids.
Inger-Lise Tangen +4 more
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Abstract Fine-grained AlN–AlN polytypoid composites doped with SiO 2 were prepared in situ by pressureless sintering of AlN–Al 2 O 3 mixtures (3.7 and 10.5 mol% Al 2 O 3 ) at 1870 °C using Y 2 O 3 as sintering aid. SiO 2 -doping (1 wt.%) was used to stabilize the AlN polytypoids and reduce the average grain size of the polytypoids.
Inger-Lise Tangen +4 more
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ChemInform, 1991
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
J. A. HANIGOFSKY +4 more
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AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
J. A. HANIGOFSKY +4 more
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Surface and Coatings Technology, 1993
Abstract Dielectric thin films of silicon nitride and aluminum nitride were deposited by r.f. and d.c. magnetron reactive sputtering respectively. Titanium-aluminum nitride thin films were prepared by d.c.-r.f. magnetron reactive sputtering codeposition.
I.J.R. Baumvol +4 more
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Abstract Dielectric thin films of silicon nitride and aluminum nitride were deposited by r.f. and d.c. magnetron reactive sputtering respectively. Titanium-aluminum nitride thin films were prepared by d.c.-r.f. magnetron reactive sputtering codeposition.
I.J.R. Baumvol +4 more
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Journal of Nanoscience and Nanotechnology, 2008
In order to fabricate aluminum nitride/boron nitride (AlN/BN) nanocomposites by pressureless sintering, the present study investigated the synthesis of AlN-BN nanocomposite powders by carbothermal reduction and nitridation of aluminum borate powders. Homogeneous mixtures of alumina (Al2O3), boric acid (H3BO3), and carbon powder were used to synthesize
Takafumi, Kusunose +3 more
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In order to fabricate aluminum nitride/boron nitride (AlN/BN) nanocomposites by pressureless sintering, the present study investigated the synthesis of AlN-BN nanocomposite powders by carbothermal reduction and nitridation of aluminum borate powders. Homogeneous mixtures of alumina (Al2O3), boric acid (H3BO3), and carbon powder were used to synthesize
Takafumi, Kusunose +3 more
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1999
Aluminum nitride (A1N) has a large band gap (∼6 eV at 300 K), a high thermal conductivity (∼3.2 W cm−1 K1 at 300 K), and large piezoelectric constants (∼∣2−5∣×10−10 cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device
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Aluminum nitride (A1N) has a large band gap (∼6 eV at 300 K), a high thermal conductivity (∼3.2 W cm−1 K1 at 300 K), and large piezoelectric constants (∼∣2−5∣×10−10 cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device
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Aluminum Nitride Composite Films
1997The paper is concerned with thermodynamical, structural and kinetic factors responsible for the formation of aluminum nitride composite films. As such we consider A1N films deposited or grown on the substrates with nonidentical chemical composition and structure made of single crystal (Al203, 6H-SiC, Si), polycrystalline (polycrystalline diamond films,
B. V. Spitsyn +4 more
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