Results 41 to 50 of about 55,413 (296)

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

Synchrotron Radiation for Quantum Technology

open access: yesAdvanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader   +10 more
wiley   +1 more source

Micromachining of AlN and Al2O3 Using Fiber Laser

open access: yesMicromachines, 2014
We report on high precision high speed micromachining of Al2O3 and AlN using pulsed near infrared fiber laser. Ablation thresholds are determined to be 30 J/cm2 for alumina and 18 J/cm2 for aluminum nitride.
Florian Preusch   +2 more
doaj   +1 more source

Corrosion and Wear-Resistant Composite Zirconium Nitride Layers Produced on the AZ91D Magnesium Alloy in Hybrid Process Using Hydrothermal Treatment

open access: yesCrystals, 2023
The aim of the study was to investigate the possibility of an effective improvement in performance properties, including corrosion and wear resistance of magnesium AZ91D alloy using a surface engineering solution based on zirconium nitride composite ...
Michał Tacikowski   +5 more
doaj   +1 more source

Qubit compatible superconducting interconnects

open access: yes, 2017
We present a fabrication process for fully superconducting interconnects compatible with superconducting qubit technology. These interconnects allow for the 3D integration of quantum circuits without introducing lossy amorphous dielectrics.
Arya, K.   +29 more
core   +1 more source

Atomic Size Misfit for Electrocatalytic Small Molecule Activation

open access: yesAdvanced Functional Materials, EarlyView.
This review explores the application and mechanisms of atomic size misfit in catalysis for small molecule activation, focusing on how structural defects and electronic properties can effectively lower the energy barriers of chemical bonds in molecules like H2O, CO2, and N2.
Ping Hong   +3 more
wiley   +1 more source

GROWTH OF ALUMINUM NITRIDE THIN FILMS VIA PEALD WITH VARIOUS PLASMA EXPOSITION DURATIONS

open access: yesВестник Северо-Кавказского федерального университета, 2022
Films of aluminum nitride were grown by the method ofplasma-activated ALD. The impact of duration of plasma exposure stage on the growth rate, composition and microstructures was analyzed.
Mikhail Ambartsumov   +4 more
doaj  

Thin-film ultraviolet detector and spectrometer [PDF]

open access: yes, 1972
Typical metal-insulator-metal detector device is formed on quartz substrate. Base electrode is 3 to 6 nm aluminum layer, overcoated with 3 to 6 nm aluminum oxide or aluminum nitride, and capped with counter electrode of gold, lead, magnesium, or aluminum.
Lewicki, G. W., Maserjian, J.
core   +1 more source

Tactile multisensing on flexible aluminum nitride [PDF]

open access: yesThe Analyst, 2012
The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant capacitive variation under normal stress. The application of a normal stress on AlN generates deformation of the flexible substrate on which AlN is grown ...
Simona Petroni   +6 more
openaire   +8 more sources

Defect Analysis of the β– to γ–Ga2O3 Phase Transition

open access: yesAdvanced Functional Materials, EarlyView.
The role of defects at all the relevant stages of the β$\beta$‐ to γ$\gamma$‐Ga2O3 polymorph transition is investigated using a multi method approach. The positron annihilation spectroscopy based results show that the defect density decreases after the transition, and that changes in defect configuration within the γ phase occur with increasing ...
Umutcan Bektas   +9 more
wiley   +1 more source

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