Results 71 to 80 of about 55,413 (296)

Preparation and properties of a new high-energy metal (W) film/aluminum nitride system energy exchanger electrothermal pyrogenant

AIP Advances
In order to improve the safety and energy exchange efficiency of electric thermal pyrotechnic devices, a new energy exchange element technology of high energy metal (W) film/aluminum nitride ceramic was explored by taking advantage of the high thermal ...
Mi Zhou, Ming Li, Jie Lei, Jiao Li, Qingying Meng, Yin Wang, Honghai Tong, Minjie Diwu, Guofu Yin   +8 more
doaj   +1 more source

Fabrication of Surface Micromachined AlN Piezoelectric Microstructures and its Potential Apllication to RF Resonators [PDF]

, 2005
We report on a novel microfabrication method to fabricate aluminum nitride (AlN) piezoelectric microstructures down to 2 microns size by a surface micromachining process.
Berenschot, E., Elwenspoek, M., Krijnen, G., Saravanan, S.   +3 more
core   +1 more source

Real‐Time, Label‐Free Monitoring of Cell Behavior on a Bioelectronic Scaffold

Advanced Functional Materials, EarlyView.
A bioelectronic nanofibrous scaffold is introduced that supports cell growth while enabling real‐time, label‐free monitoring of cellular behavior through impedance measurements. The system correlates electrical signals with cell viability and surface coverage, offering an integrated platform for studying dynamic biological processes and advancing next ...
Dana Cohen‐Gerassi, Offir Loboda, Aakash Jog, Or Messer, Dor Aaron Goldstein, Tomer Reuveni, Moran Aviv, Amit Sitt, Yosi Shacham‐Diamand, Maxim Sokol, Lihi Adler‐Abramovich   +10 more
wiley   +1 more source

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications

Discover Electronics
A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high ...
Sana Nasir, Gul Hassan, Habib Ahmad
doaj   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

Strain-driven light polarization switching in deep ultraviolet nitride emitters

, 2011
Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena.
D. Naveh, E. Towe, H. Hirayama, T. K. Sharma   +3 more
core   +1 more source

Boron-nitride and aluminum-nitride “Pringles” and flapping motion

Chem. Commun., 2014
Boron-nitride and aluminum-nitride “Pringles”: flexible structures in solution with flapping motion.
Wei, Fa, Shuang, Chen, Xiao Cheng, Zeng
openaire   +3 more sources

Nanolayer‐Encapsulated Stretchable Liquid‐Metal Sheets for Thermal Management

Advanced Functional Materials, EarlyView.
A stretchable liquid metal sheet with both high thermal conductivity and mechanical flexibility is developed. Its trilayer structure, comprising copper‐particle‐dispersed gallium liquid metal encapsulated by styrene‐butadiene‐styrene nanosheets, shows 40.4 W m−1 K−1 conductivity, elongation exceeding 200%, and retention of 96% of its initial ...
Daisuke Kuse, Yudai Kaneko, Ryohei Fujita, Tatsuhiro Horii, Daishi Shiojiri, Yuta Ozawa, Kyohei Nagatake, Tamami Takano, Yutaka Isoda, Aoi Koishikawa, Takashi Goto, Ai Ueno, Shoji Maruo, Kazuhide Ueno, Toshinori Fujie, Hosei Nagano, Hiroki Ota   +16 more
wiley   +1 more source

Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

EPJ Web of Conferences, 2013
The objective of the study is a growth of SiC/(SiC)1−x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1−x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy.
Tománek P., Bilalov B., Korostylev E., Dallaeva D.   +3 more
doaj   +1 more source

Preparation of AlN/Cu composites through a reactive infiltration process

Journal of Asian Ceramic Societies, 2016
The wetting of copper (Cu) melt on aluminum nitride (AlN) is very poor. In the present study, a reactive infiltration process is developed to prepare AlN/Cu composites.
Hsiu-Ching Hsu, Jonq-Yeu Chou, Wei-Hsing Tuan   +2 more
doaj   +1 more source