Results 131 to 140 of about 2,208,448 (255)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

ASSISTED HUMAN REPRODUCTION: PSYCHOLOGICAL AND ETHICAL DILEMMAS

open access: yes, 2003
Contributors -- Foreword / Professor Susan Golombok -- Introduction -- Ch. 1. Assisted human reproduction: contemporary policy and practice in the UK / Eric Blytb, Nina Martin and Claire Potter -- Ch. 2. Issues of gamete donation and sex selection: a

core  

Reproduction biotechnology in buffaloes: optimization of synchronization protocol for target breeding [PDF]

open access: yes, 2013
The achievement of early cyclicity after calving is of vital importance in maintaining a dairy industry. Post-partum anoestrous in buffalo is a major cause of long calving interval and infertility resulting in economic loss to buffalo breeders.
Mollah, Mohammad Habibur Rahman
core  

The effects of supplementation of vitamin D to the egg‐yolk extender on cryopreservation of ram semen

open access: yesVeterinary Medicine and Science
Objectives This study aimed to examine the effects of supplementation of vitamin D to the egg‐yolk extender on characteristics of frozen–thawed ram semen. Methods Semen samples obtained from adult rams were pooled and divided into five equal volumes.
Ahmet Aktar   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Artificial reproduction history and developmental trends in Latvia and worldwide.

open access: yes, 2007
Bakalaura darbs ir izstrādāts par tēmu „Mākslīgās apaugļošanas pirmsākumi un attīstības tendences pasaulē un Latvijā”. Pētījuma izvirzītais mērķis bija izpētīt un apkopot pieejamos datus par mākslīgās apaugļošanas pirmsākumiem un attīstības tendencēm ...
Užkurele, Kristīne
core  

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Home - About - Disclaimer - Privacy