Results 221 to 230 of about 79,596 (285)

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Intrinsically flexible multimode reconfigurable transistors for polymorphic circuits and neuromorphic devices. [PDF]

Nat Commun
Wang W, Qiu R, Zhu J, Zhu T, Wang J, Liu D, Liang J, Wang C, Zhang S, Wang Z, Huang Q, Wang X, Zhang M.   +12 more
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Multisensory Neuromorphic Devices: From Physics to Integration. [PDF]

Nanomicro Lett
Gui A, Mu H, Yang R, Zhang G, Lin S.
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Robust biodegradable synapse with sub-biological energy and extended memory for intelligent reflexive system. [PDF]

Nat Commun
Chang Y, Na S, Ro YG, Park C, Jung S, Park YJ, Kwak MS, Kim J, Oh H, Kim J, Ko H.   +10 more
europepmc   +1 more source

Enhanced 2D MoTe₂ Analogue Switching through Laser Processing and ALD-Passivation for Dual-Function Neuromorphic Devices. [PDF]

Nano Lett
Radwan M, Hosseini-Shokouh SH, Shafi AM, Dias C, Khalid F, Rajeevan S, Hyttinen H, Ali F, Ahmed F, Sun Z, Lipsanen H.   +10 more
europepmc   +1 more source

Multimodal In-Sensor Computing with Dual-Phase Organic Synapses for Wearable Fitness Monitoring. [PDF]

Adv Mater
Mao Y, Choi Y, Qian C, Roe DG, Kim S, Liu Y, Chen D, Tang D, Sun J, Cho JH.   +9 more
europepmc   +1 more source

High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices. [PDF]

Natl Sci Rev
Zhong G, Yan J, Tang M, Deng H, Tan Y, Zhong X, Li C, Fan Z, Wang J, Li J.   +9 more
europepmc   +1 more source

Devices, Functions, and Applications of Artificial Neuromorphic Visual Systems. [PDF]

Adv Sci (Weinh)
Liu J, Li B, Liu C, Sun D, Cheng H.
europepmc   +1 more source