Results 121 to 130 of about 96,611 (199)

Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires

open access: yesAdvanced Science, EarlyView.
This work demonstrates strain engineering in Ge/Si core–shell nanowires (CS NWs) by tuning the Ge core‐Si shell dimensions. Polarization‐resolved µ‐Raman and geometrical phase analysis quantify the resulting strain. Electronic transport measurements demonstrate record hole mobilities up to 25 400 cm2/Vs, highlighting these Ge/Si CS NWs as a promising ...
Aswathi K. Sivan   +14 more
wiley   +1 more source

Remote Magnetomechanical Neuromodulation Uncovers Therapeutic Mechanisms for Alleviating Parkinsonian Symptoms in Freely Moving Mice

open access: yesAdvanced Science, EarlyView.
Magnetomechanical neuromodulation using magnetic nanodiscs enables remote activation of neurons. In a hemiparkinsonian mouse model, alternating magnetic fields actuate the nanodiscs to generate torque that opens mechanosensitive ion channels within the subthalamic nucleus, thereby modulating basal ganglia motor circuitry.
Anouk Wolters   +12 more
wiley   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia   +13 more
wiley   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár   +12 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

Home - About - Disclaimer - Privacy