Results 121 to 130 of about 2,842,309 (291)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

ECS Advances
We investigated Ti-doped ZrO _2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe _2 ) _3 ) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O _3 thermal atomic layer deposition process.
Seokhwi Song, Eungju Kim, Kyunghoo Kim, Jangho Bae, Jinho Lee, Chang Hwa Jung, Hanjin Lim, Hyeongtag Jeon   +7 more
doaj   +1 more source

Regulated Ion‐Diffusion Hydrogels for Subtle and Multimodal Temperature‐Strain Sensing in Wound Monitoring

Advanced Functional Materials, EarlyView.
A soft, dual‐channel hydrogel patch enables simultaneous detection of wound temperature and strain by integrating ion‐diffusion‐mediated thermoelectric and resistive sensing. The conformal design maintains stable performance during motion, capturing subtle inflammatory and mechanical changes for continuous wound monitoring.
Yu Fang, Xinglong Pan, Zhiwei Li, Wanheng Lu, Chang Liu, Yi Zhou, Guo Tian, Ghim Wei Ho   +7 more
wiley   +1 more source

Plasma atomic layer deposition [PDF]

, 2019
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core  

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks

, 2009
International audienceThin LaxZr1−xO2−δ (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 °C using (PirCp)3La, (MeCp)2ZrMe(OMe) and O3 species. Their properties are studied by grazing incidence x-ray diffraction,
D. Tsoutsou, Tsoutsou, D., A. Molle, S. Baldovino, Molle, A., Coulon, Pierre-Eugène, Fanciulli, M., S. N. Volkos, Volkos, S. N., Schamm-Chardon, Sylvie, Baldovino, S., P. E. Coulon, Lamagna, L., M. Fanciulli, S. Schamm, L. Lamagna   +15 more
core   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Overview of doctoral theses on Atomic Layer Deposition collected in the Virtual Project on the History of ALD

, 2019
Atomic Layer Deposition (ALD) is a materials growth technique that has become globally important during the past decades. In 2018 the Finnish inventor of ALD, Tuomo Suntola, received the Millennium Technology Prize.
Jonas Sundqvist44, Marcel Junige20, David Cameron7, Anatolii Malkov5, Massimo Tallarida46, 48, Markku Leskelä29, Anjana Devi12, Thomas E. Seidel43, Gloria Gottardi, Harri Lipsanen2, Andrew R Akbashev3, Georgi Popov29, Małgorzata Norek32, Hele Savin2, Claudia Wiemer49, Jakob Kuhs11, Mikko Utriainen16, Shih-Hui Jen19, Luis Fabián Peña35, Robin H. A. Ras2, Oili M. E. Ylivaara16, Mikhail Panov21, Aristeidis Goulas15, Abdelkader Mennad30, Esko Ahvenniemi2, Ivan Khmelnitskiy21, Jyrki Molarius16, Maria Berdova2, Dennis Hausmann17, Timo Sajavaara40, Cagla Ozgit-Akgun33, Adam Łapicki28, J. Ruud van Ommen15, Yury Koshtyal24, Erwan Rauwel37, Riikka L. Puurunen2, Nikolai Chekurov8, Tanja Kallio2, Thomas Waechtler31, Oksana Yurkevich50, Mikhael Bechelany4, Victor E. Drozd5, Cagla OzgitAkgun33, Irina Kärkkänen25, Rong Chen9, Geert Rampelberg11, Jaana Kanervo2, Hendrik Pedersen34, Liliya Elnikova13, Stefan Boyadjiev6, Anatoly Malygin5, Felix Mattelaer11, Lev Klibanov23, Dmitry Suyatin45, Tommi O. Kääriäinen26, Hossein Salami41, Jaan Aarik1, Kestutis Grigoras16, 39, Tobias Törndahl47, Fred Roozeboom38, Véronique Cremers11, Luca Lamagna27, Saima Ali2, Christian Militzer31, Alexander Pyymäki Perros2, Pia Sundberg2, Fabien Piallat36, Marja-Leena Kääriäinen26, Timo Weckman2, Nathanaelle Schneider42, Mikhail Chubarov10, Irina Kärkkänen 25, Cheol Seong Hwang18, Jussi Aav2, Ivan Bodalyov5, Do Han Kim22, Jihong Yim2, Outi Krause2   +79 more
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Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source