Results 131 to 140 of about 575,100 (391)
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in ...
Elliot, Alan J. +12 more
core +1 more source
Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging.
Hongping Ma +8 more
semanticscholar +1 more source
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
Phosphorus oxide gate dielectric for black phosphorus field effect transistors
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency
Botton, G. A. +9 more
core +1 more source
Role of Anionic Backbone in NHC‐Stabilized Coinage Metal Complexes: New Precursors for Atomic Layer Deposition** [PDF]
Nils Boysen +4 more
openalex +1 more source
Synchrotron Radiation for Quantum Technology
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical ...
Altin, Serdar +8 more
core +1 more source
Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells [PDF]
Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer.
Danny Chua +10 more
core +1 more source
Atomic layer deposition of metals: Precursors and film growth
The coating of complex three-dimensional structures with ultrathin metal films is of great interest for current technical applications, particularly in microelectronics, as well as for basic research on, for example, photonics or spintronics.
D. Hagen, M. Pemble, M. Karppinen
semanticscholar +1 more source
Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on Hterminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant.
A. Mameli +7 more
semanticscholar +1 more source

