Results 141 to 150 of about 30,611 (305)

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Optimizing Atomic Layer Deposition Processes with Nanowire‐Assisted TEM Analysis

Advanced Materials Interfaces
Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra‐thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ...
Peter Schweizer, Lilian M. Vogl, Xavier Maeder, Ivo Utke, Johann Michler   +4 more
doaj   +1 more source

Structural insight into an atomic layer deposition (ALD) grown Al₂O₃ layer on Ni/SiO₂: impact on catalytic activity and stability in dry reforming of methane.

Catal Sci Technol, 2021
Kim SM, Armutlulu A, Liao WC, Hosseini D, Stoian D, Chen Z, Abdala PM, Copéret C, Müller C.   +8 more
europepmc   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Toward Stable and High‐Performance Metal Halide Perovskite Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This ToC illustrates the evolution from unstable 3D perovskites with ion migration toward advanced 2D, mixed‐halide, and vacancy‐ordered structures, culminating in stable, high‐performance perovskite field‐effect transistors. ABSTRACT There is a critical need for high‐quality perovskite semiconductor films to enable highly stable field‐effect ...
Muhammad Danish Danial bin Zulkifli, Goutham Raj Perumallapelli, Maria Vasilopoulou, Muhammad Nafie bin Jakariah, Muhammad Fazri bin Jasmin, Aliff Muhaimin bin Kamaruzaman, Abd. Rashid bin Mohd Yusoff, Ravindra Naik Bukke   +7 more
wiley   +1 more source

Gas Transport Optimization for Atomic Layer Deposition Processes (ALD)

, 2021
[ES] El proyecto se centra en la optimización del flujo en procesos ALD. Para ello se pretenden mejorar tanto el tiempo de un ciclo completo como la uniformidad de la capa depositada. El método de optimización se desarrollará haciendo uso de un benchmark validable y, posteriormente, será aplicado al reactor ALD. Mediante el software CFD Ansys Fluent se
openaire   +2 more sources

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Atomic Layer Deposition (ALD) principles, benefits, and applications

[Excerpt] The Atomic Layer Deposition (ALD) technique is a cyclic deposition technique based on the sequential purging of the precursors and co-reactants with self-limiting surface reactions. The ALD process grows ultra-thin films (< 20 nm) in two half-cycles, sub-monolayer by sub-monolayer (Figure 1). [...]
Cunha, Florival Moura, Silva, Manuel Fernando Ribeiro, Correia, J. H.   +2 more
openaire   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source