Results 121 to 130 of about 30,611 (305)

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures. [PDF]

, 2015
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface

core   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, EarlyView.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Passivation of germanium surface using ALD [PDF]

, 2014
Práce se zabývá pasivací povrchu germania pomocí chemického leptání a metodou depozice atomárních vrstev (ALD). Sledována byla především rychlost oxidace povrchu germania a zastoupení jednotlivých oxidů germania po použití vybraných metod pasivace ...
Kuba, Jakub
core  

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Enhanced atomic layer etching of native aluminum oxide for ultraviolet optical applications

, 2017
We report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. Our ALE process utilizes the
Balasubramanian, Kunjithapatham, France, Kevin, Hennessy, John, Jewell, April D., Moore, Christopher S., Nikzad, Shouleh   +5 more
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Highly‐Conductive and Micro‐Structured Transparent Glass Substrates for Efficient and Scalable Photoelectrochemical Applications

Advanced Science, EarlyView.
This work paves the way for practical photoelectrochemical water splitting devices by addressing key upscaling challenges related to substrate conductivity, absorber inhomogeneity, and mass transfer limitations. Integrated improvements in substrate engineering, material processing, device architecture, and operational conditions allow the development ...
Telmo da Silva Lopes, Jeffrey Capitão, Amin Khan, Leonardo Rodrigues, Dzmitry Ivanou, Tânia Lopes, Paula Dias, Adélio Mendes   +7 more
wiley   +1 more source

Stabilization of Single Metal Atoms on Graphitic Carbon Nitride: Synthetic Strategies and Emerging Applications

Advanced Science, EarlyView.
This review highlights recent advancements in stabilizing single metal atoms on graphitic carbon nitride emphasizing innovative synthesis strategies and emerging applications in electrocatalysis, photocatalysis and organic transformations, along with key challenges and future perspective. Abstract Emerging as a new frontier in catalysis science, single‐
Wenyao Zhang, Junjie Cui, Zhenjie Yao, Boyuan Zhu, Nithinraj Panangattu Dharmarajan, Ajayan Vinu, Junwu Zhu   +6 more
wiley   +1 more source

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Nature Communications
The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices.
Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim, Kibum Kang   +29 more
doaj   +1 more source

Advances in atmospheric-pressure particle atomic layer deposition

Gongneng cailiao yu qijian xuebao
Atmospheric pressure particle atomic layer deposition (AP-PALD) shows promising potentials in the fields of energy and catalytic materials due to its ability in precisely modifying the surfaces of functional materials operated at atmospheric or near ...
Guanghui YAN, Gaoshan HUANG, Xueqiang LU, Xueqin ZUO, Dongdong MI, Guoxiang CHEN, Yi OUYANG, Xiangzhong CHEN, Zhihao BAO, Yongfeng MEI, Jianjun SHI   +10 more
doaj   +1 more source

High-quality cobalt thin films by plasma-enhanced atomic layer deposition [PDF]

High-quality Co films with low resistivity (10 mu Omega cm) were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and NH3 plasma. The deposition characteristics and film properties were investigated. Especially,
Kim, H, Lee, HBR
core   +1 more source