Results 121 to 130 of about 2,787,827 (292)

Nanopattering by direct-write atomic layer deposition

open access: yes, 2012
A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition.
Kessels, WMM Erwin   +7 more
core   +1 more source

Adaptive Conductive Systems: Enabling Deformable Electronics Through Engineered Materials, Circuits, and Intelligent Systems

open access: yesAdvanced Science, EarlyView.
This review presents the research advances of adaptive conductive systems from the perspective of materials, circuits, systems, and applications. Deformable conductors consist of substrates/matrices and conductive materials, structural design of circuit interconnections, fabrication of circuit interconnections, as well as intelligent systems ...
Yufei Lu   +7 more
wiley   +1 more source

Hafnium (IV) oxide obtained by atomic layer deposition (ALD) technology promotes early osteogenesis via activation of Runx2-OPN-mir21A axis while inhibits osteoclasts activity. [PDF]

open access: yesJ Nanobiotechnology, 2020
Seweryn A   +8 more
europepmc   +1 more source

Microfluidic Gratings for X‐Ray Phase Contrast Imaging

open access: yesAdvanced Science, EarlyView.
This work establishes a new protocol for the fabrication of X‐ray gratings that exploits the advantages of microfluidics and enables a more inexpensive, faster, and scalable production process. These X‐ray devices are fundamental for implementing X‐ray phase contrast imaging (XPCI) in laboratory and clinical settings, yet their costly and complex ...
Alessandro Rossi   +10 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada   +11 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Photocatalytic 3D ZnO Nanostructures Prepared by Atomic Layer Deposition from a Sacrificial Cellulose Template

open access: yes
Three-dimensional ZnO structures were prepared by both thermal atomic layer deposition (ThALD) and plasma-enhanced atomic layer deposition (PEALD) on a sacrificial cellulose template.
Ambrožić, Gabriela   +11 more
core   +1 more source

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