Results 131 to 140 of about 2,787,827 (292)

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Plasma atomic layer deposition [PDF]

, 2019
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core  

Room-temperature atomic layer deposition of platinum

, 2013
Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 µO cm were obtained for processes consisting of MeCpPtMe3 ...
Bol, AA Ageeth, Kessels, WMM Erwin, Bol, A.A., Mackus, A.J.M., Knoops, H.C.M.; id_orcid, Garcia-Alonso Garcia, D Diana, Garcia-Alonso Garcia, D., Knoops, H.C.M., Mackus, AJM Adrie, Knoops, HCM Harm, Kessels, W.M.M.   +10 more
core   +1 more source

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

Advanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

Opportunities for plasma-assisted atomic layer deposition

, 2007
Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasmaproduced species. The application of such a low-temperature plasma in the ALD cycle can therefore open up a processing ...
Heil, S.B.S., Hemmen, van, J.L., Langereis, E., Knoops, H.C.M.; id_orcid, Sanden, van de, M.C.M., Knoops, H.C.M., Kessels, W.M.M., Keuning, W.   +7 more
core   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Optimizing Atomic Layer Deposition Processes with Nanowire‐Assisted TEM Analysis

Advanced Materials Interfaces
Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra‐thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ...
Peter Schweizer, Lilian M. Vogl, Xavier Maeder, Ivo Utke, Johann Michler   +4 more
doaj   +1 more source

Plasma atomic layer deposition [PDF]

, 2018
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core