Results 111 to 120 of about 2,787,827 (292)

Graphene‐Engineered Rear Interfaces Enable Efficient Flexible CZTSSe Solar Cells on Metal Foils

Advanced Science, EarlyView.
An atomically thin graphene interlayer stabilizes the rear interface of flexible CZTSSe solar cells by regulating interfacial stress, suppressing detrimental interfacial reactions, and reducing the back‐contact barrier. This strategy simultaneously improves photovoltaic performance and mechanical durability.
Yixiong Ji, Wentong Yang, Di Yan, Wei Luo, Jialu Li, Shi Tang, Jintao Fu, James Bullock, Mei Gao, Xin Li, Zhancheng Li, Jun Yang, Zhenghong Xiong, Yang Peng, Pengjun Zhao, Xingzhan Wei, Haofei Shi, Paul Mulvaney, Fangyang Liu   +18 more
wiley   +1 more source

Advances in atmospheric-pressure particle atomic layer deposition

Gongneng cailiao yu qijian xuebao
Atmospheric pressure particle atomic layer deposition (AP-PALD) shows promising potentials in the fields of energy and catalytic materials due to its ability in precisely modifying the surfaces of functional materials operated at atmospheric or near ...
Guanghui YAN, Gaoshan HUANG, Xueqiang LU, Xueqin ZUO, Dongdong MI, Guoxiang CHEN, Yi OUYANG, Xiangzhong CHEN, Zhihao BAO, Yongfeng MEI, Jianjun SHI   +10 more
doaj   +1 more source

On the early history of atomic layer deposition: most significant works and applications

, 2016
Atomic layer deposition (ALD) is a technique that has been instrumental in enabling the semiconductor industry to maintain its adherence to Moore’s Law, and is becoming a gamechanger in several other fields. A worldwide voluntary effort called “Virtual
Anatoly, Malkov, Massimo, Tallarida, Claudia, Wiemer, Simon, Elliott, Mikhail, Panov, Mikko, Utriainen, Thomas, Wächtler, Harri, Lipsanen, Henrik, Pedersen, Fred, Roozeboom, Hele, Savin, Pia, Sundberg, Mikhael, l. Bechelany, Jaan, Aarik, Cagla, Ozgit Akgun, Fabien, Piallat, Oili, M. E. Ylivaara, Yury, Koshtyal, Ruud van Ommen, J., Gottardi, Gloria, Cheol Seong, Hwang, Esko, Ahvenniemi, Tobias, Törndahl, Tanja, Kallio, Marcel, Junige, Jaana, Kanervo, Ivan, Khmelnitskiy, Tommi, Kääriäinen, Andrew, R. Akbashev, Outi, Krause, Luca, Lamagna, Viktor, Drozd, Kestutis, Grigoras, Alexander, Pyymaki Perros, Dmitry, Suyatin, Jussi, Lyytinen, Maria, Berdova, Marja Leena, Kääriäinen, Anatoly, Malygin, Malgorzata, [Gosia] Norek, Georgi, Popov, Riikka, L. Puurunen, Timo, Sajavaara, Oksana, Yurkevich, Jonas, Sundqvist, Jyrki, Molarius, Mikhail, Chubarov, Robin, H. A. Ras   +47 more
core  

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Plasma atomic layer deposition [PDF]

, 2020
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core  

Studies on enhanced OLED performance using Al2O3 buffer layer by atomic layer deposition

, 2012
 It has been found that introduction of buffer layers between organic holes transport layer and anode layer plays an important role in improving device stability and hole injection efficiency.
Z. Cui（崔铮）, W. M. Su *（苏文明）, L. Zhou（周璐）   +2 more
core  

Electroforming‐Free, Self‐Rectifying Selector‐Only Memory With Diffusive Cu‐Ion Dynamics for Logic‐In‐Memory Computing

Advanced Science, EarlyView.
Electroforming‐free, self‐rectifying switching with polarity‐dependent threshold modulation is realized in selector‐only memory through Cu‐ion migration in a bilayer stacked dual functional materials. Ultrafast rupturing of Cu filament enables drift‐free operation with high stability.
Jae‐Kyeong Kim, Dae‐Seong Woo, Min‐Jong Han, Hong‐Gwang Seo, Gwang‐Ho Park, In‐Taek Woo, Jea‐Gun Park, Jinsub Park   +7 more
wiley   +1 more source

Advances in Atomic Layer Deposition (ALD) Nanolaminate Synthesis of Thermoelectric Films in Porous Templates for Improved Seebeck Coefficient. [PDF]

Materials (Basel), 2020
Chen X, Baumgart H.
europepmc   +1 more source

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic

Advanced Science, EarlyView.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim, Min Seok Kim, Joong Bum Rhim, Tae In Kim, Hyuck‐In Kwon, Ick‐Joon Park   +5 more
wiley   +1 more source

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Nature Communications
The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices.
Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim, Kibum Kang   +29 more
doaj   +1 more source