Results 111 to 120 of about 30,611 (305)
Atomic layer deposition of functional multicomponent oxides
APL Materials, 2019 Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific compositions with precise structures and controlled interfaces.
Mariona Coll, Mari Napari
doaj +1 more source
Advanced Materials Interfaces, EarlyView.Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim +7 more
wiley +1 more source
Atomic Layer Deposition of Inorganic Thin Films on 3D Polymer Nanonetworks
Applied Sciences, 2019 Atomic layer deposition (ALD) is a unique tool for conformally depositing inorganic thin films with precisely controlled thickness at nanoscale. Recently, ALD has been used in the manufacture of inorganic thin films using a three-dimensional (3D ...
Jinseong Ahn +3 more
doaj +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
Advanced Materials Interfaces, EarlyView.This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Using ALD To Bond CNTs to Substrates and Matrices [PDF]
Atomic-layer deposition (ALD) has been shown to be effective as a means of coating carbon nanotubes (CNTs) with layers of Al2O3 that form strong bonds between the CNTs and the substrates on which the CNTs are grown.
Bronikowski, Michael J. +2 more
core +1 more source
Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors
Advanced Materials Interfaces, EarlyView.The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov +8 more
wiley +1 more source
MethodsX, 2019 This paper reports on light yield enhancement of terbium-doped gadolinium oxysulfide based scintillator screens achieved by coating their substrates with thin layers of a high density and high atomic number material.
Jan Crha +4 more
doaj +1 more source
Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications [PDF]
Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited
Jhabvala, Christine A. +2 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Tailoring the morphology of MoS2 using RF Magnetron Sputtering for Enhanced Photoelectrochemical Water Splitting. ABSTRACT 2D molybdenum disulfide (MoS2) is a promising material for optoelectronic and photoelectrochemical (PEC) applications due to its unique properties.
Somnath Ladhane +9 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann +4 more
wiley +1 more source