Results 91 to 100 of about 30,611 (305)
Passivation effects of atomic-layer-deposited aluminum oxide
EPJ Photovoltaics, 2013 Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R. +5 more
doaj +1 more source
Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
AIP Advances, 2020 The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and
Jibran Hussain +5 more
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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition [PDF]
, 2017 Enhancement of the properties of zinc oxide (ZnO)-based Schottky diodes has been explored using a combination of plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin films and silver oxide Schottky contacts deposited by reactive radio-frequency ...
Chalker, PR +11 more
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Advanced Materials, EarlyView.Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley +1 more source
A Colloidal Quantum Dot Thermistor and Bolometer
Advanced Materials, EarlyView.This work introduces colloidal quantum dot thermistors employing a potential barrier structure to tune the activation energy of transport and hence the temperature coefficient of resistance (TCR). Upon integration with plasmonic absorbers, the CQD‐based bolometer device enables room‐temperature wavelength‐selective photodetection across the mid‐ to ...
Gaurav Kumar +7 more
wiley +1 more source
Applied SciencesNiTi shape memory alloys (SMAs) are widely studied for their potential applications, and atomic layer deposition (ALD) is an effective technique for coating them due to its precise control over coating thickness.
David Vokoun +5 more
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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [PDF]
, 2007 The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion.
A. M. Sonnet +11 more
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Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes
Advanced Materials, EarlyView.Transparent perovskite light‐emitting diodes (TrPeLEDs) enable simultaneous display and transparency, expanding application possibilities. Using a metal oxide buffer layer and pulsed laser deposition, TrPeLEDs with diverse compositions and architectures are demonstrated.
Michele Forzatti +11 more
wiley +1 more source
Atomic layer processing for Ångström-scale precision in 3D-integrated semiconductor manufacturing
International Journal of Extreme ManufacturingFor decades, conventional geometric scaling has driven performance improvements in the semiconductor industry. However, the continued reduction in technology nodes has increasingly become decoupled from simple dimensional shrinkage, instead reflecting ...
Hae Lin Yang +7 more
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Advanced Materials, EarlyView.This review highlights recent advances in electrospun nanofiber‐based triboelectric nanogenerators, emphasizing how material design, fiber architecture, and interface engineering collectively enhance output performance and mechanical durability. Key developments in porous, aligned, core‐shell, and hierarchical nanofibers are discussed alongside ...
MD Fajla Rabbi +3 more
wiley +1 more source