Results 81 to 90 of about 2,787,827 (292)

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al2O3 and its application in imprinting lithography

Beilstein Journal of Nanotechnology, 2017
We present a method to increase the stability of DNA nanostructure templates through conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD).
Hyojeong Kim, Kristin Arbutina, Anqin Xu, Haitao Liu   +3 more
doaj   +1 more source

Atomic layer deposition

, 2015
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-phase deposition technique for preparing ultra-thin films with precise growth control.
Bol, AA Ageeth, Potts, SE Stephen, Kessels, WMM Erwin, Kuech, T., Potts, S.E., Bol, A.A., A.A. Bol, Knoops, H.C.M.; id_orcid, H.C.M. Knoops, Knoops, H.C.M., S.E. Potts, W.M.M. Kessels, Knoops, HCM Harm, Kessels, W.M.M.   +13 more
core   +1 more source

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

Advanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu, Yiran Li, Tsung‐Han Tsai, Sudip Acharya, Yi Lu, Jie Zhou, Samuel A. Haessly, Shui‐Qing Yu, Nanditha M. Dissanayake, Edward K. Huang, Jiarui Gong, Zhenqiang Ma   +11 more
wiley   +1 more source

Fatigue Resistance Improvement in Cold-Drawn NiTi Wires Treated with ALD: A Preliminary Investigation

Applied Sciences
NiTi shape memory alloys (SMAs) are widely studied for their potential applications, and atomic layer deposition (ALD) is an effective technique for coating them due to its precise control over coating thickness.
David Vokoun, Ondřej Tyc, Sneha Manjaree Samal, Ivo Stachiv, Yoshane Yu, Chichung Kei   +5 more
doaj   +1 more source

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3

AIP Advances, 2020
The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and
Jibran Hussain, Haris Naeem Abbasi, Wei Wang, Yan-Feng Wang, Ruozheng Wang, Hong-Xing Wang   +5 more
doaj   +1 more source

Correlation of micro and nano–scale defects with WVTR for aluminium oxide barrier coatings for flexible photovoltaic modules [PDF]

, 2013
This paper seeks to establish a correlation between surface topographical defects and water vapour transmission rate (WVTR) measured under laboratory conditions for aluminium–oxide (Al2O3) barrier film employed in flexible photovoltaic (PV) modules ...
Sweeney, Francis, Elrawemi, Mohamed, Blunt, Liam, Fleming, Leigh   +3 more
core   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

Advanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho, Ming‐Hung Wu, Yu‐De Lin, Po‐Chun Yeh, Kai Ni, Wen‐Yueh Jang, Tuo‐Hung Hou   +6 more
wiley   +1 more source

Atomic layer processing for Ångström-scale precision in 3D-integrated semiconductor manufacturing

International Journal of Extreme Manufacturing
For decades, conventional geometric scaling has driven performance improvements in the semiconductor industry. However, the continued reduction in technology nodes has increasingly become decoupled from simple dimensional shrinkage, instead reflecting ...
Hae Lin Yang, Min Chan Kim, Gi-Beom Park, Ji-Yeon Park, Hyein Park, Jihoon Shin, Jinho Ahn, Jin-Seong Park   +7 more
doaj   +1 more source

Electrical characterization of thin film passivation layers for p-type silicon solar cells [PDF]

, 2012
Le celle solari in Silicio monocristallino costituiscono una delle principali tecnologie fotovoltaiche. Uno degli aspetti più limitanti è il prezzo del Silicio: circa il 70% del costo di una cella completa deriva dal substrato siliceo.
Morato, Alessandro
core