Results 81 to 90 of about 7,248 (265)

Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging

Advanced Science, EarlyView.
A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn, Sanghoon Park, Seunghyup Yoo   +2 more
wiley   +1 more source

Biodegradable Zn‐Based Implants: Progress, Challenges, and Pathways toward Clinical Translation

Advanced Science, EarlyView.
Exploring biodegradable Zn‐based implants offers a promising pathway to next‐generation biomedical devices with balanced degradation and biocompatibility. A comprehensive overview of biodegradable Zn‐based implants, covering their biological significance, material design principles, and advanced engineering strategies is provided.
Panfeng Zhao, Zhengquan Wang, Hui Yang, Xiyuan Zhang, Hanyuan Liu, Xiaotong Lu, Xiaocheng Li, Yanyan Liu, Xi Zhao, Wenhao Zhou, Yufeng Zheng   +10 more
wiley   +1 more source

Light Yield Enhancement of 157-Gadolinium Oxysulfide Scintillator Screens for the High-Resolution Neutron Imaging

MethodsX, 2019
This paper reports on light yield enhancement of terbium-doped gadolinium oxysulfide based scintillator screens achieved by coating their substrates with thin layers of a high density and high atomic number material.
Jan Crha, Joan Vila-Comamala, Eberhard Lehmann, Christian David, Pavel Trtik   +4 more
doaj   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

Advanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng, Yin‐Chen Sun, Yu‐Cheng Kao, Hsin‐Yu Hsu, Pin‐Jiun Wu, Yung‐Hsien Wu   +5 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Advances in atmospheric-pressure particle atomic layer deposition

Gongneng cailiao yu qijian xuebao
Atmospheric pressure particle atomic layer deposition (AP-PALD) shows promising potentials in the fields of energy and catalytic materials due to its ability in precisely modifying the surfaces of functional materials operated at atmospheric or near ...
Guanghui YAN, Gaoshan HUANG, Xueqiang LU, Xueqin ZUO, Dongdong MI, Guoxiang CHEN, Yi OUYANG, Xiangzhong CHEN, Zhihao BAO, Yongfeng MEI, Jianjun SHI   +10 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source