Results 71 to 80 of about 30,611 (305)

Transfer of Graphene with Protective Oxide Layers

open access: yes, 2018
Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS).
Fisher, B.   +6 more
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min   +13 more
wiley   +1 more source

Advances in the application of atomic layer deposition in the preparation of optoelectronic devices

open access: yesGongneng cailiao yu qijian xuebao
Atomic layer deposition (ALD) is a highly precise thin-film deposition technique that enables the uniform deposition of nanometer-thick films. It is particularly well-suited for fabricating complex microstructures and heterogeneous material interfaces ...
Ce DONG   +7 more
doaj   +1 more source

Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle x-ray scattering

open access: yes, 2014
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing.
Bals, Sara   +8 more
core   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

open access: yes, 2005
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures.
Lai, K.   +6 more
core   +1 more source

In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition [PDF]

open access: yes, 2014
A
Christophe Detavernier   +7 more
core   +2 more sources

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers

open access: yesNanoscale Research Letters, 2017
Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic layer deposition (ALD).
Zhixin Wan   +7 more
doaj   +1 more source

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

open access: yes, 2013
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical ...
Altin, Serdar   +8 more
core   +1 more source

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