Results 71 to 80 of about 2,787,827 (292)

Characterization and Quality Control of Aluminium-Oxide Layers Prepared by Atomic Layer Deposition

, 2022
In this thesis, the deposition temperature effects on thin films produced using Atomic Layer deposition (ALD) are studied, as well as some of the most commonly used methods in the university to characterize this films.
Gil Rendon, David
core  

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

Atomic layer deposition enabling higher efficiency solar cells: A review

Nano Materials Science, 2020
Atomic layer deposition (ALD) can synthesise materials with atomic-scale precision. The ability to tune the material composition, film thickness with excellent conformality, allow low-temperature processing, and in-situ real-time monitoring makes this ...
Md. Anower Hossain, Kean Thong Khoo, Xin Cui, Geedhika K Poduval, Tian Zhang, Xiang Li, Wei Min Li, Bram Hoex   +7 more
doaj   +1 more source

Overview of doctoral theses on Atomic Layer Deposition collected in the Virtual Project on the History of ALD

, 2019
Atomic Layer Deposition (ALD) is a materials growth technique that has become globally important during the past decades. In 2018 the Finnish inventor of ALD, Tuomo Suntola, received the Millennium Technology Prize.
Jonas Sundqvist44, Marcel Junige20, David Cameron7, Anatolii Malkov5, Massimo Tallarida46, 48, Markku Leskelä29, Anjana Devi12, Thomas E. Seidel43, Gloria Gottardi, Harri Lipsanen2, Andrew R Akbashev3, Georgi Popov29, Małgorzata Norek32, Hele Savin2, Claudia Wiemer49, Jakob Kuhs11, Mikko Utriainen16, Shih-Hui Jen19, Luis Fabián Peña35, Robin H. A. Ras2, Oili M. E. Ylivaara16, Mikhail Panov21, Aristeidis Goulas15, Abdelkader Mennad30, Esko Ahvenniemi2, Ivan Khmelnitskiy21, Jyrki Molarius16, Maria Berdova2, Dennis Hausmann17, Timo Sajavaara40, Cagla Ozgit-Akgun33, Adam Łapicki28, J. Ruud van Ommen15, Yury Koshtyal24, Erwan Rauwel37, Riikka L. Puurunen2, Nikolai Chekurov8, Tanja Kallio2, Thomas Waechtler31, Oksana Yurkevich50, Mikhael Bechelany4, Victor E. Drozd5, Cagla OzgitAkgun33, Irina Kärkkänen25, Rong Chen9, Geert Rampelberg11, Jaana Kanervo2, Hendrik Pedersen34, Liliya Elnikova13, Stefan Boyadjiev6, Anatoly Malygin5, Felix Mattelaer11, Lev Klibanov23, Dmitry Suyatin45, Tommi O. Kääriäinen26, Hossein Salami41, Jaan Aarik1, Kestutis Grigoras16, 39, Tobias Törndahl47, Fred Roozeboom38, Véronique Cremers11, Luca Lamagna27, Saima Ali2, Christian Militzer31, Alexander Pyymäki Perros2, Pia Sundberg2, Fabien Piallat36, Marja-Leena Kääriäinen26, Timo Weckman2, Nathanaelle Schneider42, Mikhail Chubarov10, Irina Kärkkänen 25, Cheol Seong Hwang18, Jussi Aav2, Ivan Bodalyov5, Do Han Kim22, Jihong Yim2, Outi Krause2   +79 more
core  

Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3

, 2023
Halide perovskites, such as CsSnI3, are materials renowned for their exceptional optoelectronic properties. CsSnI3 stands out as a desirable choice for nontoxic and environmentally friendly absorber layers in perovskite solar cells (PSC) due to the ...
Mizohata, Kenichiro, Ritala, Mikko, Weiß, Alexander, Leskelä, Markku, Terletskaia, Mariia, Kemell, Marianna, Popov, Georgi   +6 more
core   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

Advanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee, Han Joo Lee, Myeonggeun Choe, Jeehong Park, Yeonjin Yi, Seongil Im, Suk Hyun Park, Hee Cheul Choi, Ji Hoon Park, Sarah S. Park   +9 more
wiley   +1 more source

Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers

Nanoscale Research Letters, 2017
Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic layer deposition (ALD).
Zhixin Wan, Teng Fei Zhang, Ji Cheng Ding, Chang-Min Kim, So-Won Park, Yang Yang, Kwang-Ho Kim, Se-Hun Kwon   +7 more
doaj   +1 more source

Controlled Growth of Boron Nitride in Various Phases

Advanced Materials Interfaces, EarlyView.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu, Kanghao Xie, Jiajie Qi, Xiaorui Zheng, Kaihui Liu, Xuedong Bai, Li Wang   +6 more
wiley   +1 more source

Passivation effects of atomic-layer-deposited aluminum oxide

EPJ Photovoltaics, 2013
Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R., Delamare R., Poncelet O., Tang X., Francis L. A., Flandre D.   +5 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source