Results 51 to 60 of about 30,611 (305)

Anomalous Pressure‐Temperature Ultrahigh Sensitivities in Atomically Engineered Carbonitride MXenes for Multifunctional Wearable Human–Machine Interfaces: Joint Computational–Experimental Elucidations

Advanced Functional Materials, EarlyView.
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra, Ju‐Hyoung Han, Hyun Jin Kang, Jeong Eun Byun, Seonghun Lee, Sanghyuk Lee, Yeseul Son, Jaeeun Park, Tae Joo Shin, Youngho Kang, Jung Woo Lee, Soon‐Yong Kwon, Soo‐Hyun Kim   +12 more
wiley   +1 more source

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs [PDF]

, 2015
Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition ...
Aubry, R., di Forte-Poisson, M. A., Gamarra, P., Hjelmgren, Hans, Lacam, C., Malmros, Anna, Rorsman, Niklas, Thorsell, Mattias, Tordjman, M.   +8 more
core   +1 more source

In‐Situ Solution Complexation for n‐Type Surface‐Energetics Reconstruction in 2.0 eV Ultra‐Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
A reactive in situ solution complexation strategy reconstructs the surface of 2.0 eV ultra‐wide‐bandgap perovskites via proton transfer. This chemical modulation eliminates metallic defects and induces a degenerate‐like n‐type surface, establishing an Ohmic tunneling contact.
Saemon Yoon, Han‐Gyun Lim, Jinyoung Kim, Gyu Min Kim, Seojun Lee, Jun Ryu, SungWon Cho, Jincheol Kim, Hyosung Choi, Jung Sang Cho, Jongsung Park, Dong‐Won Kang   +11 more
wiley   +1 more source

A Review on Performance Improvement of Solid Oxide Cells via Atomic Layer Deposition [PDF]

한국정밀공학회지
Atomic Layer Deposition (ALD) has emerged as a promising technique for fabricating thin films that enhance the performance of solid oxide fuel cells and solid oxide electrolysis cells. ALD allows for precise control over film thickness and composition at
Min Seong Gwon, Kyoungjae Ju, Jihwan An
doaj   +1 more source

Single‐ and Dual‐Atom Configurations in Atomically Dispersed Catalysts for Lithium–Sulfur Batteries

Advanced Functional Materials, EarlyView.
Single‐atom and dual‐atom‐based atomically dispersed catalysts (ADCs) effectively address the shuttle effect and sluggish redox kinetics in Li–S batteries. With nearly 100% atomic utilization and tunable coordination environments, ADCs enhance LiPSs adsorption, lower conversion barriers, and accelerate sulfur redox reactions.
Haoyang Xu, Zhenfeng Li, Yue Fei, Ali Mohammadi, Ge Li   +4 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

C, 2019
Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on Gr is
Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Filippo Giannazzo   +3 more
doaj   +1 more source

A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors [PDF]

, 2013
Cataloged from PDF version of article.In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD).
Aydinli, A., Muti, A., Salihoglu, O.
core   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

Advanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim, Sanghoon Baek, Seonguk Yang, Chang‐Soo Lee, Sang‐Hoon Bae, Joonki Suh, Yongwoo Lee, Haksoon Jung, Jimin Kwon   +11 more
wiley   +1 more source

Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al₂O₃ Film Growth

Nanomaterials, 2023
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves, William Chiappim, Júlia Karnopp, Benedito Neto, Douglas Leite, Argemiro da Silva Sobrinho, Rodrigo Pessoa   +6 more
doaj   +1 more source